Impact of the Plasma Ambient and the Ruthenium Precursor on the Growth of Ruthenium Films by Plasma Enhanced Atomic Layer Deposition

摘要

We compare the growth behavior of nm-thin ruthenium layers using N2/NH3- and N_2/H_2-based plasmas during plasma enhanced atomic layer deposition for two ruthenium precursors. For bis(efhylcyclopentadienyl)ruthenium, we have found a large incubation time on titanium nitride when using N_2/NH_3 plasma. With N_2/H_2 plasma the incubation was reduced and tunable with the Ru dose per pulse. In contrast to the incubation, the steady state growth does not depend significantly on the plasma ambient given that there are H_2 or NH3 species. For (methylcyclopentadienylpyrrolyl)ruthenium, no significant incubation was observed for either plasmas, which is attributed to the presence of the pyrrolyl group.