Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H-2-plasma

Minjauw Matthias M.; Dendooven Jolien; Capon Boris; Schaekers Marc; Detavernier Christophe

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Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H-2-plasma

机译：使用RuO4-前体和H-2-等离子体在近室温等离子体下增强钌的原子层沉积

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A plasma enhanced ALD process for Ru using RuO4 and H-2-plasma is reported at sample temperatures ranging from 50 degrees C to 100 degrees C. At 50 degrees C, low impurity content Ru thin films were grown with a saturated growth rate of 0.11 nm per cycle. A study of the influence of various process parameters on the Ru film properties is given.

机译：据报道，在样品温度为50摄氏度至100摄氏度的条件下，使用RuO4和H-2-等离子体对Ru进行了等离子体增强ALD工艺。在50摄氏度下，低杂质含量的Ru薄膜以0.11的饱和生长速率生长每个周期的nm。研究了各种工艺参数对Ru膜性能的影响。

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《Journal of Materials Chemistry, C. materials for optical and electronic devices 》 |2015年第19期| 共4页
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Minjauw Matthias M.; Dendooven Jolien; Capon Boris; Schaekers Marc; Detavernier Christophe;
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中图分类物理化学（理论化学）、化学物理学 ;
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1. Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H-2-plasma [J] . Minjauw Matthias M., Dendooven Jolien, Capon Boris, Journal of Materials Chemistry, C. materials for optical and electronic devices . 2015 ,第19期

机译：使用RuO4-前体和H-2-等离子体在近室温等离子体下增强钌的原子层沉积
2. Impact of the Plasma Ambient and the Ruthenium Precursor on the Growth of Ruthenium Films by Plasma Enhanced Atomic Layer Deposition [J] . J. Swerts, A. Delabie, M. M. Salimullah ECS Solid State Letters . 2012 ,第2期

机译：血浆环境和钌前体对血浆增强原子层沉积钌膜生长的影响
3. Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor [J] . Alexander Rogozhin, Andrey Miakonkikh, Elizaveta Smirnova, Coatings . 2021 ,第2期

机译：使用Ru（ETCP）2前体增强钌膜的血浆增强原子层沉积
4. Low temperature thermal and plasma enhanced atomic layer deposition of ruthenium using RuO4 and H2/H2-plasma [C] . Minjauw Matthias M., Dendooven Jolien, Capon Boris, 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference . 2015

机译：使用RuO 4 和H 2 / H 2 -等离子对钌进行低温热和等离子体增强的原子层沉积
5. Plasma-Enhanced Atomic Layer Deposition of Ruthenium-Titanium Nitride Mixed-Phase Layers for Direct-Plate Liner and Copper Diffusion Barrier Applications. [D] . Gildea, Adam James. 2013

机译：用于直接板衬和铜扩散阻挡层应用的钌-氮化钛混合相层的等离子体增强原子层沉积。
6. Structural Optical and Electrical Properties of HfO2 Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition [O] . Kyoung-Mun Kim, Jin Sub Jang, Soon-Gil Yoon, 2020

机译：等离子体增强原子层沉积在低温下沉积的HfO2薄膜的结构光学和电学性质
7. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas [O] . Perros, A., Bosund, M., Sajavaara, Timo, 2016

机译：在基于SF6的等离子体中通过低温等离子体增强的原子层沉积法生长的氮化铝掩模层的等离子体蚀刻特性
8. Spoof-Like Plasmonic Behavior of Plasma Enhanced Atomic Layer Deposition Grown Ag Thin Films. [R] . Prokes, S. M., Glembocki, O. J., Cleveland, E., 2012

机译：等离子体增强原子层沉积ag薄膜的类似等离子体行为。

Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H-2-plasma

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