GaN-Based LEDs with Nano-Patterns by Contact-Transferred and Mask-Embedded Lithography and Cl_2/N_2 Plasma Etching

摘要

The authors report GaN-based LEDs with nano-patterns by contact-transferred and mask-embedded lithography (CMEL) and CI2/N2 plasma etching with in-situ 20-sccm N_2 treatment. With 20 mA current injection, it was found that output powers were 4.28, 4.59, and 5.16 mW for the LEDs without CMEL, with CMEL-3 p,m, and with CMEL-400 nm, respectively. It was also found that we can achieve 20.5% enhancement for the LED with CMEL-400 nm. Besides, The CMEL will not degrade the electrical properties of the GaN-based LEDs.