Method for structuring metal layers by lithography and subsequent plasma etching comprises applying the required antireflection layer as a dielectric layer before the reactive ion etching of the uppermost metal layer of several metal layers

摘要

Structuring metal layers by lithography, especially i-line lithography or DIN lithography and subsequent plasma etching, especially reactive ion etching, comprises applying the required antireflection layer (3) as a dielectric layer before the reactive ion etching of the uppermost metal layer of several metal layers placed on top of each other. Preferred Features: The thickness of the dielectric antireflection layer is chosen so that the light used in the lithographic process undergoes minimal reflection. The dielectric antireflection layer forms a highly selective etching mask in combination with a thin photoresist layer (4). The antireflection layer comprises silicon oxy nitride.