Through-Silicon via Submount for Flip-Chip LEDs

摘要

A blue light emitting diode (LED) was prepared by a flip-chip (FC) LED and three-dimensional through-silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 180 mu m and 400 mu m, respectively. The Cu was uniformly and high density filled in each TSV, and the average resistance was about 0.14 m Omega. It was also found that the 96.43Sn-3.57at% Ag bumps were electroplated on the Cu plugged TSVs of a silicon substrate, and these were smoother at 250 degrees C. After reflow, a 3D blue light emitting diode was prepared by peak bonding at 250 degrees C and 1000 N pressure for 30 min. Compared with the output of the LED 417.17 mw/w, that of the 3D LED was 424.67 mw/w. (c) The Author(s) 2017. Published by ECS. All rights reserved.