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Capacitive Silicon Sensors for Ultrasound

机译:超声波电容式硅传感器

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The simulation, implementation, and experimental study of ultraonic sensors made with micromachining techniques on silicon wafers is discussed. The theoretical model of the sensor is based on a lumped-element equivalent circuit and takes intoconsideration the customary components of a condenser microphone including stiffness and friction of the air gap. The si,ulation results show the effect of the frictional damping on the tension of the membrane and by the air gap stiffness, respectively, and separated by a resistive drop-off region. Depending on the amount of resistive damping, either of the restoring forces can control the resonance frequency. An implementation of the microphone consists of a membrane chip with a Si_3N_4 membrane and a backplate chip with holes or slits bonded to the membrane chip. Experimental results for the sensitivity and frequency response of a two-chip silicon microphone are presented. The microphone shows an almost constant sensitivity of about 1.6mV/Pa in the frequency range up to 180 kHz. finally, the micromechanical processing steps of a new single-chip, ultrasonic sensor not yet implemented are discussed.
机译:讨论了在硅片上用微加工技术制造的超声波传感器的仿真,实现和实验研究。传感器的理论模型基于集总等效电路,并考虑了电容式传声器的常规组件,包括刚度和气隙摩擦。仿真结果分别显示了摩擦阻尼对薄膜张力和气隙刚度的影响,并通过电阻降落区域进行了分隔。取决于电阻阻尼的量,任何一个恢复力都可以控制共振频率。麦克风的实现包括具有Si_3N_4膜的膜芯片和具有与膜芯片结合的孔或缝的背板芯片。给出了两芯片硅麦克风的灵敏度和频率响应的实验结果。麦克风在高达180 kHz的频率范围内显示出几乎恒定的灵敏度,约为1.6mV / Pa。最后,讨论了尚未实现的新型单芯片超声波传感器的微机械处理步骤。

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