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A fracture model for exfoliation of thin silicon films

机译:薄硅膜剥离的裂缝模型

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The direct exfoliation of thin films from silicon wafers has the potential to significantly lower the cost of flexible electronics while leveraging the performance benefits and established infrastructure of traditional wafer-based fabrication processes. However, controlling the thickness and uniformity of exfoliated silicon thin films has proven difficult due to a lack of understanding and control over the exfoliation process. This paper presents a new silicon exfoliation process and model which enables accurate prediction of the thickness and quality of the exfoliated thin-film based on the exfoliation process parameters. This model uses a parametric, finite element, linear elastic fracture mechanics study with nonlinear loading to determine how each process parameter affects the crack propagation depth. A metamodel is then constructed from the results of numerous simulations to inform the design and operation of a novel exfoliation tool and predict thickness of produced films. In order to manufacture uniform, high-quality films, the tool creates a controlled peeling load that is able to propagate a crack through the silicon in a controlled manner. Finally, exfoliated silicon samples produced with the prototype tool are evaluated and compared to metamodel projections, confirming the ability of the tool to steer crack trajectory within +/- 3microns of the crack depth predictions.
机译:来自硅晶片的薄膜的直接剥离具有显着降低柔性电子产品的成本,同时利用性能益处和基于传统的基于晶片的制造工艺的基础设施。然而,由于缺乏对剥离过程的理解和控制,控制剥离硅薄膜的厚度和均匀性已经难以困扰。本文介绍了一种新的硅剥离过程和模型,可以基于剥离工艺参数精确地预测剥离薄膜的厚度和质量。该模型采用参数,有限元线性弹性骨折力学研究,具有非线性负载,以确定每个过程参数如何影响裂缝传播深度。然后由多种模拟的结果构成元模拟,以通知新的剥离工具的设计和操作并预测产生的薄膜的厚度。为了制造均匀,高质量的薄膜,该工具产生受控的剥离负荷,能够以受控方式通过硅传播裂缝。最后,评估用原型工具产生的剥离硅样品,并与Metamodel突起进行比较,确认工具在裂缝深度预测的+/- 3micron内转向裂纹轨迹的能力。

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