Nanocrystalline Cu-Ni Thin Film by Plasma-Assisted Liquid Injection Chemical Vapor Deposition

摘要

The temperature dependence equilibrium vapor pressure data yielded a straight line when In p_e was plotted against 1/T, leading to a standard enthalpy of evaporation value of 82.1 ±0.1 kJ·mol~(-1) for bis(4-aminopent-3-en-2-onato)nickel(II). The deposition of Cu-Ni thin film was carried out using volatile metailorganic complexes of Cu(acac)_2 and Ni(acacimine)_2 as vapor sources at 723 K by PA-LICVD process. The deposited films were studied by X-ray diffraction, scanning electron microscope, and scanning tunneling microscope. Nanocrystalline thin film of Cu-Ni (20 nm) with (111) plane as the dominant orientation was obtained on glass substrate under a deposition pressure of 0.8-1.2 mbar.