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机译:通过Ga掺杂和过量的Mg和过量的mg和P型Mg_2(1 + Z)(SiO 3 SnO.7)_(1-Y)Ga_y的镁掺杂和过量的空穴浓度
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China;
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China;
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China;
A. silicides; various; A. ternary alloy systems; B. electrical resistance andother electrical properties; B. thermoelectric properties; D. point defects; G. thermoelectric power generation;
机译:通过Ga掺杂和过量的Mg和过量的mg和P型Mg_2(1 + Z)(SiO 3 SnO.7)_(1-Y)Ga_y的镁掺杂和过量的空穴浓度
机译:氮掺杂的P型Znse,P型Zns_yse_(1-y)和P型Zn_(1-x)mg_xs_yse_(1-y)外延受体的激子和给体-受体对的活化能Gaas(1 0 0)衬底上生长的薄膜
机译:Diamondoid结构中的UltraLow导热系数和(CU_(1-x)AG_X)(IN_(1-Y)GA_Y)TE_2中的高热电性能
机译:添加CrSi2可提高P型SiGe热电合金的掺杂浓度
机译:碳60掺杂P型铋(0.5)锑(1.5)碲(3)的热电性能研究。
机译:FeZn和CD掺杂P型TetrahedRite的机械合成和热电性能:Cu12-XMXSB4S13
机译:通过增强热电性能的行星球磨成本有效地合成P型Zn掺杂MgAgSB
机译:理解应变在p型In(x)Ga(1-x)as(Gaas衬底)和In(0.53 + x)Ga(0.47-x)as(on on)上的孔隙尺寸裁剪中的作用的理论形式Inp substrates)调制掺杂场效应晶体管