Investigation of the relation between photoluminescence intensity and decay time reduction with plasmon effect in InGaAs quantum dots

摘要

Plasmonic effects on photoluminescence are investigated via time-integrated and resolved photoluminescence (PL) in epitaxially grown InGaAs quantum dots (QDs). The decay time and PL intensities are compared as a function of the density of Ag nanoplates. Optimal conditions for both reduction lifetime and enhanced PL intensity were found to be a 1:15 ratio of Ag nanoplates to water. Both less and greater than that ratio 1:15, the lifetime increased and the enhancement factor of PL intensity decreased. In addition, the plasmon effect was investigated via resonance wavelength and temperature-dependent PL measurements. At 150K near the resonance conditions between PL from InGaAs QDs and Ag nanoplates, both the lifetime reduction and enhancement factor are maximized. Intensity enhancement is correlated to lifetime reduction for various conditions to identify a condition for maximized enhancement of radiative recombination for designing future ultrafast plasmonic nanolasers.