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首页> 外文期刊>Current applied physics: the official journal of the Korean Physical Society >Influence of solvent on solution processed Cu2ZnSnS4 nanocrystals and annealing induced changes in the optical, structural properties of CZTS film
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Influence of solvent on solution processed Cu2ZnSnS4 nanocrystals and annealing induced changes in the optical, structural properties of CZTS film

机译:溶剂对溶液Cu2ZNSN4纳米晶体和退火诱导变化的CZTS膜的光学,结构性能变化的影响

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摘要

The well-known quaternary Cu2ZnSnS4 (CZTS) chalcogenide thin films are playing an important role in modern technology. The CZTS nanocrystal were successfully prepared by solution method using water, ethylene glycol and ethylenediamine as different solvent. The pure phase material was used for thin film coating by thermal evaporation method. The prepared CZTS thin films were characterized by XRD, Raman spectroscopy, FESEM, XPS and FT-IR spectroscopy. The XRD and Raman spectroscopy analysis revealed the formation of polycrystalline CZTS thin film with tetragonal crystal structure after annealing at 450 degrees C. The oxidation state of the annealed film was studied by XPS. A direct band gap about 1.36 eV was estimated for the film from FT-IR studies, which is nearly close to the optimum value of band gap energy of CZTS materials for best solar cell efficiency. The CZTS annealed thin films are more suitable for using as a p-type absorber layer in a low-cost solar cell.
机译:众所周知的季齐Cu2ZNS4(CZTS)硫属化物薄膜在现代技术中发挥着重要作用。 通过使用水,乙二醇和乙二胺作为不同的溶剂,通过溶液方法成功制备CZT纳米晶。 通过热蒸发法用于纯相材料用于薄膜涂层。 制备的CZTS薄膜的特征在于XRD,拉曼光谱,FESEM,XPS和FT-IR光谱。 XRD和拉曼光谱分析显示,在450℃下退火后,在退火后,通过四边形晶体结构形成多晶CZTS薄膜。通过XPS研究退火膜的氧化状态。 来自FT-IR研究的薄膜估计了大约1.36eV的直接带隙,这几乎接近CZTS材料的带隙能量的最佳值,以获得最佳的太阳能电池效率。 CZTS退火薄膜更适合于在低成本太阳能电池中用作p型吸收层。

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