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Influence of pH on structural, optical and electrical properties of solution processed Cu2ZnSnS4 thin film absorbers

机译:pH对固溶处理的Cu2ZnSnS4薄膜吸收剂的结构,光学和电学性质的影响

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Cu2ZnSnS4 (CZTS) films were obtained by the dip-coating method. The effect of different pH values 4.0, 4.5, and 5.0 on the structural, morphological, optical and electrical properties of samples was investigated by XRD, SEM, UV-vis and Hall Effect measurements. The XRD spectra showed that the characteristic peak intensity of CZTS semiconductor increased with increasing pH value of the precursor solution. It was also observed that increased pH values resulted in a significant reduction in the amount of impurity phases of the films. The UV-vis studies revealed a significant increase in the optical absorption of thin films in the visible region as the pH value of the solution was increased. The band gap of the samples shifted from 2.0 to 1.38 eV by increasing the pH value. The electrical resistivity of the films was found to vary from 2.8 x 10(-2) to 3.1 Omega cm, depending on its pH value. (C) 2015 Elsevier Ltd. All rights reserved.
机译:通过浸涂法获得Cu2ZnSnS4(CZTS)膜。通过XRD,SEM,UV-vis和霍尔效应测量研究了不同pH值4.0、4.5和5.0对样品的结构,形态,光学和电学性质的影响。 XRD谱图表明,随着前驱体溶液pH值的增加,CZTS半导体的特征峰强度增加。还观察到,增加的pH值导致膜中杂质相的量显着减少。 UV-vis研究表明,随着溶液pH值的增加,薄膜在可见光区域的光吸收显着增加。通过增加pH值,样品的带隙从2.0变为1.38 eV。发现薄膜的电阻率在2.8 x 10(-2)到3.1Ωcm之间,具体取决于其pH值。 (C)2015 Elsevier Ltd.保留所有权利。

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