Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition

摘要

Monocrystalline, low-defect density Si thin films were successfully fabricated via epitaxy with 1 minute rapid vapor deposition on a porous seed layer. Zone heating recrystallization reduced the surface roughness of the seed layer to sub-nanometer size. The critical effect of roughness on the defect density of epitaxial films was confirmed.