Low-Temperature epitaxial growth of InGaAs films on InP(100) and InP(411)A substrates

摘要

The structural and electrical characteristics of In0.53Ga0.47As epitaxial films, grown in the low-temperature mode on InP substrates with (100) and (411)A crystallographic orientations at flow ratios of As4 molecules and In and Ga atoms of gamma = 29 and 90, have been comprehensively studied. The use of InP(411)A substrates is shown to increase the probability of forming two-dimensional defects (twins, stacking faults, dislocations, and grain boundaries), thus reducing the mobility of free electrons, and As-Ga point defects, which act as donors and increase the free-electron concentration. An increase in gamma from 29 to 90 leads to transformation of single-crystal InGaAs films grown on (100) and (411)A substrates into polycrystalline ones.