Hillocks arise on the films, when compound semiconductor films are grown on an InP wafer having a surface near a (100) orientation. Off-angle wafers have been adopted for a substrate in order to suppress the occurrence of hillocks. The off-angle THETA from a (100) plane is not a sole factor for ruling the generation of hillocks. There is a concealed parameter which determines the generation of hillocks. What induces hillocks on the growing film is the defects on the substrate itself. No hillocks originate on a part of an InP wafer without dislocations. The role of the off-angle THETA of the substrate is preventing the influence of the dislocations from transmitting to the films. A smaller density D of the defects on the substrate allows a smaller off-angle THETA for suppressing the hillocks from arising. A bigger density D of the defects demands a larger off-angle for the substrate so as to forbid the hillocks from originating. An inequality THETA /= 1 x 10-3D1/2 is the condition for annihilating hillocks. More precise condition is THETA /= 1.26 x 10-3D1/2. MATH
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机译：当在具有接近（100）取向的表面的InP晶片上生长化合物半导体膜时，在膜上出现小丘。为了抑制小丘的出现，已将斜角晶片用于衬底。与（100）平面成角度的THETA并不是支配小丘产生的唯一因素。有一个隐藏参数确定小丘的生成。在生长的薄膜上引起小丘的是基材本身的缺陷。没有位错的InP晶圆的一部分不会出现小丘。基板的斜角THETA的作用是防止位错的影响传递到薄膜上。基板上的缺陷的较小的密度D允许较小的斜角THETA，以抑制小丘的产生。缺陷的较大密度D要求基板具有较大的倾斜角，以防止小丘产生。不等式THETA> / = 1 x 10 3 -D 1/2是消除小丘的条件。更精确的条件是THETA> / = 1.26 x 10 3 -D 1/2。 展开▼
