When compound semiconductor films are grown on an InP wafer having a surface near a (100) orientation hillocks tend to arise on the films. Off- angle wafers have been adopted for substrates in order to suppress the occurrence of hillocks. The off-angle from a (100) plane, however, is not the sole factor for determing wheather hillocks will be formed on the film. There is a concealed parameter which determines the generation of hillocks. What induces hillocks on the growing film are the defects on the substrate itself. No hillocks originate on portions of the film that correspond to the portions of the InP wafer without dislocations. The role of the off-angle of the substrate is preventing the influence of the dislocations from transmitting to the films. A smaller density D of the defects on the substrate allows a smaller off-angle . THETA. for suppressing the hillocks from arising. A larger density D of the defects demands a larger off-angle for the substrate so as to prevents the hillocks from originating. An inequality 1. times.10.sup.-3 D.sup.1/2 allows calculation of the off-angle for preventing hillocks. More precisely, the inequlity is expressed as 1.2610.sup.-3 D.sup.1/2.
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机译：当化合物半导体膜在具有接近（100）取向的表面的InP晶片上生长时，倾向于在膜上出现小丘。为了抑制小丘的出现，已将斜角晶片用于衬底。但是，与（100）平面的偏斜并不是确定将在胶片上形成小麦小丘的唯一因素。有一个隐藏参数确定小丘的生成。在生长膜上引起小丘的原因是基材本身的缺陷。在与位错的InP晶圆对应的薄膜部分上，不会出现小丘。衬底的偏角的作用是防止位错的影响传递到膜上。衬底上的缺陷的较小密度D允许较小的偏角。 THETA。用于抑制小丘的产生。缺陷的较大密度D要求基板具有较大的倾斜角，以防止小丘产生。不等式1 x 10 sup-3 D sup.1 / 2允许计算偏角以防止小丘。更准确地说，不等式表示为1.2610.sup.-3 D.sup.1 / 2。
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