Stable 2D Conductive Ga/Ga(O        <i >          <sub>x</sub>                  <sub >x</sub>x                H        <i >          <sub>y</sub>                  <sub >y</sub>y                ) Multilayers with Controlled Nanoscale Thickness Prepared from Gallium Droplets with Oxide Skin

Runde Sebastian; Ahrens Heiko; Lawrenz Frank; Sebastian Amal; Block Stephan; Helm Christiane A.

摘要

Abstract >The practical applicability of ultrathin films, which offer interesting and novel functionalities, is often limited by difficulties in achieving large area deposition while maintaining homogenous layer properties. Herein, a new deposition method allowing ultrathin, conductive gallium‐containing layers to be prepared at ambient conditions on wafer‐scaled areas is presented. Multilayers are formed by repetition of the deposition procedure. High‐resolution structural analysis using X‐ray reflectometry shows that the multilayer thickness is proportional to the number of deposition cycles, yielding a highly reproducible single layer thickness of 2.9 ± 0.2 nm. Furthermore, it is shown that single layers consist of a complex heterostructure composed of a nanometer‐thin metallic Ga core, which is surrounded by stabilizing gallium (hydr)oxide skin layers. The macroscopic electric conductivity of these multilayers increases with increasing number of deposited layers, approaching the value of bulk gallium after six deposition cycles, thereby showing that functional properties such as the multilayer's electrical conductivity can be fine‐tuned based on the chosen number of deposition cycles. </abstract> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> <div class="translation abstracttxt"> <span class="zhankaihshouqi fivelineshidden" id="abstract"> <span>机译：</span><Abstract Type =“Main”XML：Lang =“en”> <标题类型=“main”>抽象</ title> <P>提供有趣和新功能的超薄膜的实际适用性通常受到在保持均匀层性质的同时实现大面积沉积的困难。这里，提出了一种新的沉积方法，允许在晶片缩放区域的环境条件下在环境条件下制备含有超薄的含镓的层。通过重复沉积过程形成多层。使用X射线反射区的高分辨率结构分析表明，多层厚度与沉积循环的数量成比例，产生高度可再现的单层厚度为2.9±0.2nm。此外，示出单层由由纳米薄金属Ga芯构成的复杂异质结构组成，其通过稳定镓（氢）氧化物皮肤层来包围。这些多层的宏观导电性随着沉积层数量的越来越多的沉积层而增加，从而在六个沉积循环之后接近体积镓的值，从而示出了诸如多层的电导率的功能性能可以基于所选择的沉积循环进行微调。</ p> </摘要> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> </div> <div class="record"> <h2 class="all_title" id="enpatent33" >著录项</h2> <ul> <li> <span class="lefttit">来源</span> <div style="width: 86%;vertical-align: text-top;display: inline-block;"> <a href='/journal-foreign-18063/'>《Advanced materials interfaces》</a> <b style="margin: 0 2px;">|</b><span>2018年第16期</span><b style="margin: 0 2px;">|</b><span>共7页</span> </div> </li> <li> <div class="author"> <span class="lefttit">作者</span> <p id="fAuthorthree" class="threelineshidden zhankaihshouqi"> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Runde Sebastian&option=202" target="_blank" rel="nofollow">Runde Sebastian;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Ahrens Heiko&option=202" target="_blank" rel="nofollow">Ahrens Heiko;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Lawrenz Frank&option=202" target="_blank" rel="nofollow">Lawrenz Frank;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Sebastian Amal&option=202" target="_blank" rel="nofollow">Sebastian Amal;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Block Stephan&option=202" target="_blank" rel="nofollow">Block Stephan;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Helm Christiane A.&option=202" target="_blank" rel="nofollow">Helm Christiane A.;</a> </p> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zkzz" style="display: none;">展开▼</span> </div> </li> <li> <div style="display: flex;"> <span class="lefttit">作者单位</span> <div style="position: relative;margin-left: 3px;max-width: 639px;"> <div class="threelineshidden zhankaihshouqi" id="fOrgthree"> <p>Institute for PhysicsUniversity of GreifswaldFelix‐Hausdorff‐Str. 6 17489 Greifswald Germany;</p> <p>Institute for PhysicsUniversity of GreifswaldFelix‐Hausdorff‐Str. 6 17489 Greifswald Germany;</p> <p>Institute for PhysicsUniversity of GreifswaldFelix‐Hausdorff‐Str. 6 17489 Greifswald Germany;</p> <p>Institute for PhysicsUniversity of GreifswaldFelix‐Hausdorff‐Str. 6 17489 Greifswald Germany;</p> <p>Department of Chemistry and BiochemistryFreie Universit?t BerlinTakustr. 3 14195 Berlin Germany;</p> <p>Institute for PhysicsUniversity of GreifswaldFelix‐Hausdorff‐Str. 6 17489 Greifswald Germany;</p> </div> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zhdw" style="display: none;">展开▼</span> </div> </div> </li> <li > <span class="lefttit">收录信息</span> <span style="width: 86%;vertical-align: text-top;display: inline-block;"></span> </li> <li> <span class="lefttit">原文格式</span> <span>PDF</span> </li> <li> <span class="lefttit">正文语种</span> <span>eng</span> </li> <li> <span class="lefttit">中图分类</span> <span><a href="https://www.zhangqiaokeyan.com/clc/6960.html" title="特种结构材料">特种结构材料;</a></span> </li> <li class="antistop"> <span class="lefttit">关键词</span> <p style="width: 86%;vertical-align: text-top;"> <a style="color: 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<span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=张学群&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 张学群</a> <span> <a href="/conference-cn-35594/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 纳米科学与技术学术会议 </a> <span> <span> . 1994</span> </span> </div> </li> <li> <div> <b>6. </b><a class="enjiyixqcontent" href="/academic-degree-domestic_mphd_thesis/020314903337.html">紫外透明导电氧化镓薄膜的制备及性能表征</a> <b>[A] </b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=袁苑&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 袁苑</a> <span> . 2006</span> </span> </div> </li> </ul> <ul style="display: none;"> <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/patent-detail/06120109619355.html">具有渐变In组分p型InGaN导电层的GaN基绿光LED外延结构及其制备方法</a> <b>[P]</b> . <span> 中国专利： CN107146836A </span> <span> . 2017-09-08</span> </div> </li> <li> <div> <b>2. </b><a class="enjiyixqcontent" href="/patent-detail/061204414772.html">具有GaAs和GaN复合沟道的GaN HEMT器件及制备方法</a> <b>[P]</b> . <span> 中国专利： CN108831922B </span> <span> . 2021.05.18</span> </div> </li> <li> <div> <b>3. </b><a class="enjiyixqcontent" href="/patent-detail/06130501218259.html">GALLIUM-DOPED ZINC OXIDE PARTICLES, FILM CONTAINING GALLIUM-DOPED ZINC OXIDE PARTICLES, TRANSPARENT CONDUCTIVE FILM, ELECTRONIC DEVICE, AND METHOD FOR PRODUCING GALLIUM-DOPED ZINC OXIDE PARTICLES</a> <b>[P]</b> . <span> 外国专利：  WO2021251297A1 </span> <span> . 2021-12-16</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：掺杂掺杂的氧化锌颗粒，含镓掺杂的氧化锌颗粒，透明导电膜，电子器件和生产镓掺杂氧化锌颗粒的方法 </span> </p> </li> <li> <div> <b>4. </b><a class="enjiyixqcontent" href="/patent-detail/06130415941906.html">Method of manufacturing gallium hydroxide, the method of producing gallium oxide powder, a sputtering target made of a sintered body and the sintered body of the gallium oxide powder, the oxidation of gallium</a> <b>[P]</b> . <span> 外国专利：  JPWO2013103034A1 </span> <span> . 2015-05-11</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：氢氧化镓的制造方法，氧化镓粉的制造方法，由烧结体制成的溅射靶和氧化镓粉的烧结体，镓的氧化 </span> </p> </li> <li> <div> <b>5. </b><a class="enjiyixqcontent" href="/patent-detail/06130419750841.html">METHOD FOR PRODUCING GALLIUM HYDROXIDE, METHOD FOR PRODUCING GALLIUM OXIDE POWDER, GALLIUM OXIDE POWDER, GALLIUM OXIDE SINTERED COMPACT AND SPUTTERING TARGET FORMED FROM SINTERED COMPACT</a> <b>[P]</b> . <span> 外国专利：  WO2013103034A1 </span> <span> . 2013-07-11</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：氢氧化镓的制造方法，氧化镓粉末的制造方法，氧化镓粉末，氧化镓烧结体和由烧结体形成的溅射靶 </span> </p> </li> </ul> </div> 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Stable 2D Conductive Ga/Ga(O x xx H y yy ) Multilayers with Controlled Nanoscale Thickness Prepared from Gallium Droplets with Oxide Skin

摘要

Stable 2D Conductive Ga/Ga(O _x _xx H _y _yy ) Multilayers with Controlled Nanoscale Thickness Prepared from Gallium Droplets with Oxide Skin