Wafer‐Scale Epitaxial 1T′, 1T′–2H Mixed, and 2H Phases MoTe        <sub >2</sub>2        Thin Films Grown by Metal–Organic Chemical Vapor Deposition

Kim TaeWan; Park Hyeji; Joung DaeHwa; Kim DongHwan; Lee Rochelle; Shin Chae Ho; Diware Mangesh; Chegal Won; Jeong Soo Hwan; Shin Jae Cheol; Park Jonghoo; Kang Sang‐Woo

摘要

Abstract > 2D materials beyond molybdenum disulfide such as molybdenum ditelluride (MoTe <sub>2</sub> ) have attracted increasing attention because of their distinctive properties, such as phase‐engineered, relatively narrow direct bandgap of 1.0–1.1 eV and superior carrier transport. However, a wafer‐scale synthesis process is required for achieving practical applications in next‐generation electronic devices using MoTe <sub>2</sub> thin films. Herein, the direct growth of atomically thin 1T′, 1T′–2H mixed, and 2H phases MoTe <sub>2</sub> films on a 4 in. SiO <sub>2</sub> /Si wafer with high spatial uniformity (≈96%) via metal–organic vapor phase deposition is reported. Furthermore, the wafer‐scale phase engineering of few‐layer MoTe <sub>2</sub> film is investigated by controlling the H <sub>2</sub> molar flow rate. While the use of a low H <sub>2</sub> molar flow rate results in 1T′ and 1T′–2H mixed phase MoTe <sub>2</sub> films, 2H phase MoTe <sub>2</sub> films are obtained at a high H <sub>2</sub> molar flow rate. Field‐effect transistors fabricated with the prepared 2H and 1T′ phases MoTe <sub>2</sub> channels reveal p‐type semiconductor and semimetal properties, respectively. This work demonstrates the potential for reliable wafer‐scale production of 1T′ and 2H phases MoTe <sub>2</sub> thin films employing the H <sub>2</sub> molar flow rate‐controlled phase tunable method for practical applications in next‐generation electronic devices as a p‐type semiconductor and Wyle semimetal. </abstract> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> <div class="translation abstracttxt"> <span class="zhankaihshouqi fivelineshidden" id="abstract"> <span>机译：</span><Abstract Type =“Main”XML：Lang =“en”> <标题类型=“main”>抽象</ title> > 超出二硫化钼的2D材料，如钼Ditelluide（Mote <sub> 2 </ sub> ）由于其独特的性能，如相机，相对窄的直接带隙，而且是1.0-1.1eV和优越的载流子。然而，需要使用Mote实现下一代电子设备中的实际应用所需的晶片级合成过程 <sub> 2 </ sub> 薄膜。在此，原子上薄1t'，1t'-2h混合的直接生长和2h阶段 <sub> 2 </ sub> 电影在4英寸。SIO <sub> 2 </ sub> 报道了通过金属 - 有机气相沉积的具有高空间均匀性（≈96％）的Si晶片。此外，几层细胺的晶片级阶段工程 <sub> 2 </ sub> 通过控制H来研究薄膜 <sub> 2 </ sub> 磨牙流量。虽然使用低h <sub> 2 </ sub> 摩尔流速导致1T'和1T'-2H混合相膜 <sub> 2 </ sub> 电影，2h相块 <sub> 2 </ sub> 薄膜在高清中获得 <sub> 2 </ sub> 磨牙流量。用制备的2H和1T'阶段Mote制造的场效应晶体管 <sub> 2 </ sub> 通道分别显示p型半导体和半型特性。这项工作展示了1T'和2H阶段的可靠晶圆级生产的潜力 <sub> 2 </ sub> 薄膜采用h <sub> 2 </ sub> 磨牙流量控制相调的下一代电子设备实际应用作为P型半导体和Wyle半型。 </ p> </摘要> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> </div> <div class="record"> <h2 class="all_title" id="enpatent33" >著录项</h2> <ul> <li> <span class="lefttit">来源</span> <div style="width: 86%;vertical-align: text-top;display: inline-block;"> <a href='/journal-foreign-18063/'>《Advanced materials interfaces》</a> <b style="margin: 0 2px;">|</b><span>2018年第15期</span><b style="margin: 0 2px;">|</b><span>共8页</span> </div> </li> <li> <div class="author"> <span class="lefttit">作者</span> <p id="fAuthorthree" class="threelineshidden zhankaihshouqi"> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Kim TaeWan&option=202" target="_blank" rel="nofollow">Kim TaeWan;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Park Hyeji&option=202" target="_blank" rel="nofollow">Park Hyeji;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Joung DaeHwa&option=202" target="_blank" rel="nofollow">Joung DaeHwa;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Kim DongHwan&option=202" target="_blank" rel="nofollow">Kim DongHwan;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Lee Rochelle&option=202" target="_blank" rel="nofollow">Lee Rochelle;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Shin Chae Ho&option=202" target="_blank" rel="nofollow">Shin Chae Ho;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Diware Mangesh&option=202" target="_blank" rel="nofollow">Diware Mangesh;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Chegal Won&option=202" target="_blank" rel="nofollow">Chegal Won;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Jeong Soo Hwan&option=202" target="_blank" rel="nofollow">Jeong Soo Hwan;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Shin Jae Cheol&option=202" target="_blank" rel="nofollow">Shin Jae Cheol;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Park Jonghoo&option=202" target="_blank" rel="nofollow">Park Jonghoo;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Kang Sang‐Woo&option=202" target="_blank" rel="nofollow">Kang Sang‐Woo;</a> </p> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zkzz" style="display: none;">展开▼</span> </div> </li> <li> <div style="display: flex;"> <span class="lefttit">作者单位</span> <div style="position: relative;margin-left: 3px;max-width: 639px;"> <div class="threelineshidden zhankaihshouqi" id="fOrgthree"> <p>Advanced Instrumentation InstituteKorea Research Institute of Standards and ScienceDaejeon 305‐340 Korea;</p> <p>Advanced Instrumentation InstituteKorea Research Institute of Standards and ScienceDaejeon 305‐340 Korea;</p> <p>Advanced Instrumentation InstituteKorea Research Institute of Standards and ScienceDaejeon 305‐340 Korea;</p> <p>Advanced Instrumentation InstituteKorea Research Institute of Standards and ScienceDaejeon 305‐340 Korea;</p> <p>Department of PhysicsYeungnam UniversityGyeongsan 38541 Republic of Korea;</p> <p>Advanced Instrumentation InstituteKorea Research Institute of Standards and ScienceDaejeon 305‐340 Korea;</p> <p>Advanced Instrumentation InstituteKorea Research Institute of Standards and ScienceDaejeon 305‐340 Korea;</p> <p>Advanced Instrumentation InstituteKorea Research Institute of Standards and ScienceDaejeon 305‐340 Korea;</p> <p>Department of Chemical EngineeringKyungpook National University80 Daehak‐ro Pook‐gu Daegu 41566 Korea;</p> <p>Department of PhysicsYeungnam UniversityGyeongsan 38541 Republic of Korea;</p> <p>Department of Electrical EngineeringKyungpook National University80 Daehak‐ro Pook‐gu Daegu 41566 Korea;</p> <p>Advanced Instrumentation InstituteKorea Research Institute of Standards and ScienceDaejeon 305‐340 Korea;</p> </div> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zhdw" style="display: none;">展开▼</span> </div> </div> </li> <li > <span class="lefttit">收录信息</span> <span style="width: 86%;vertical-align: text-top;display: inline-block;"></span> </li> <li> <span class="lefttit">原文格式</span> <span>PDF</span> </li> <li> <span class="lefttit">正文语种</span> <span>eng</span> </li> <li> <span class="lefttit">中图分类</span> <span><a href="https://www.zhangqiaokeyan.com/clc/6960.html" title="特种结构材料">特种结构材料;</a></span> </li> <li class="antistop"> <span class="lefttit">关键词</span> <p style="width: 86%;vertical-align: text-top;"> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=1T′ and 2H phase MoTe 2&option=203" rel="nofollow">1T′ and 2H phase MoTe 2;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=H 2 flow rate&option=203" rel="nofollow">H 2 flow rate;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=metal–organic chemical vapor deposition&option=203" rel="nofollow">metal–organic chemical vapor deposition;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=phase engineering&option=203" rel="nofollow">phase engineering;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=wafer‐scale synthesis&option=203" rel="nofollow">wafer‐scale synthesis;</a> </p> <div class="translation"> 机译：1T'和2H相模型2;H 2流速;金属 - 有机化学气相沉积;相工程;晶圆级合成; </div> </li> </ul> </div> </div> <div class="literature cardcommon" id="literaturereference" style="display:none"> <div class="similarity "> <h3 class="all_title" id="enpatent111">引文网络</h3> <div class="referencetab clearfix"> <ul id="referencedaohang"> <li dataid="referenceul">参考文献</li> <li dataid="citationul">引证文献</li> <li dataid="commonreferenceul">共引文献</li> <li dataid="commoncitationul">同被引文献</li> <li dataid="tworeferenceul">二级参考文献</li> <li dataid="twocitationul">二级引证文献</li> </ul> </div> <div class="reference_details" id="referenceList"> <ul id="referenceul"></ul> <ul id="citationul"></ul> <ul id="commonreferenceul"></ul> <ul id="commoncitationul"></ul> <ul id="tworeferenceul"></ul> <ul id="twocitationul"></ul> </div> </div> </div> <div class="literature cardcommon"> <div class="similarity "> <h3 class="all_title" id="enpatent66">相似文献</h3> <div class="similaritytab clearfix"> <ul> <li class="active" >外文文献</li> <li >中文文献</li> <li >专利</li> </ul> </div> <div class="similarity_details"> <ul > <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/journal-foreign-detail/0704022433988.html">Wafer‐Scale Epitaxial 1T′, 1T′–2H Mixed, and 2H Phases MoTe <sub >2</sub>2 Thin Films Grown by Metal–Organic Chemical Vapor Deposition</a> <b>[J]</b> . <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Kim TaeWan&option=202" target="_blank" rel="nofollow" class="tuijian_auth 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J.,</a> <span>1989</span> </span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：mOCVD（金属有机化学气相沉积）生长外延陶瓷氧化物薄膜的表征。</span> </p> </li> </ul> <ul style="display: none;"> <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/academic-journal-cn_acta-physica-sinica_thesis/0201250858618.html">金属有机物化学气相沉积同质外延GaN薄膜表面形貌的改善</a> <b>[J]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=李忠辉&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 李忠辉</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=李传皓&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,李传皓</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=罗伟科&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,罗伟科</a> <span> <a href="/journal-cn-15096/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 物理学报 </a> </span> <span> . 2017</span><span>,第010期</span> </span> </div> </li> <li> <div> <b>2. </b><a class="enjiyixqcontent" href="/academic-journal-cn_chemical-analysis-meterage_thesis/0201235187730.html">纳米级半金属薄膜Fe3O4（001）的外延生长及晶向测定</a> <b>[J]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=王梅玲&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 王梅玲</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=王海&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,王海</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=高思田&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,高思田</a> <span> <a href="/journal-cn-11976/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 化学分析计量 </a> </span> <span> . 2014</span><span>,第005期</span> </span> </div> </li> <li> <div> <b>3. </b><a class="enjiyixqcontent" href="/academic-journal-cn_detail_thesis/0201296434897.html">混合物理化学气相沉积法制备蓝宝石衬底外延MgB_2薄膜性质的研究</a> <b>[J]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=丁莉莉&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 丁莉莉</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=陈莉萍&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,陈莉萍</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=李芬&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,李芬</a> <span> <a href="/journal-cn-57127/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 低温物理学报 </a> </span> <span> . 2006</span><span>,第2期</span> </span> </div> </li> <li> <div> <b>4. </b><a class="enjiyixqcontent" href="/academic-journal-cn_journal-infrared-millimeter-waves_thesis/0201236206732.html">金属有机物化学气相沉积GaAs/Si外延层中1.13eV发光带特性研究</a> <b>[J]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=赵家龙&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 赵家龙</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=高瑛&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,高瑛</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=刘学彦&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,刘学彦</a> <span> <a href="/journal-cn-8748/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 红外与毫米波学报 </a> </span> <span> . 1995</span><span>,第004期</span> </span> </div> </li> <li> <div> <b>5. </b><a class="enjiyixqcontent" href="/academic-journal-cn_journal-semiconductors_thesis/0201292073583.html">金属有机化学气相沉积GaAs／Si外延层中的深能级发光对温度的依赖关系</a> <b>[J]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=赵家龙&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 赵家龙</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=高瑛&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,高瑛</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=刘学彦&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,刘学彦</a> <span> <a href="/journal-cn-50336/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 半导体学报：英文版 </a> </span> <span> . 1995</span><span>,第8期</span> </span> </div> </li> <li> <div> <b>6. </b><a class="enjiyixqcontent" href="/academic-conference-cn_meeting-41417_thesis/020222470018.html">金属有机化学气相沉积中表面预处理对氮化镓同质外延的影响</a> <b>[C]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Yanbin Qin&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 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Wafer‐Scale Epitaxial 1T′, 1T′–2H Mixed, and 2H Phases MoTe 22 Thin Films Grown by Metal–Organic Chemical Vapor Deposition

摘要

Wafer‐Scale Epitaxial 1T′, 1T′–2H Mixed, and 2H Phases MoTe ₂2 Thin Films Grown by Metal–Organic Chemical Vapor Deposition