On Optimization of Manufacturing of Power Amplifier Circuit Based on Bipolar Heterostructures to Increase Density of Their Elements. Influence of Miss-Match Induced Stress

摘要

In this paper we introduce an approach to increase density of bipolar transistors framework power amplifier. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped bydiffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure.We introduce an analytical approach to analyze mass and heat transportin heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.