Heterostructure Bipolar Transistors Based on InP and Application to Integrated Circuits for Lightwave Communication

摘要

This paper gives an overview of the properties of high speed Al0.48In0.52 As/In0.53 Ga0.47 As and InP/In0.53 Ga0.47 As heterostructure bipolar transistors (HBTs). Examples of the application of these transistors in integrated circuits relevant for lightwave communication systems are shown.