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A facile synthesis of silicon carbide nanoparticles with high specific surface area by using corn cob

机译:用玉米棒具有高比表面积的碳化硅纳米粒子的容纳合成

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Corn cob, which possesses low ash and high carbon contents, is a common waste material that accounts for a large amount of agricultural waste. This paper reports about a facile method to synthesize silicon carbide (SiC) nanoparticles with high specific surface area by using corn cob as a carbon source. The method is accomplished by carbothermal reduction at 1350 degrees C using corn cob as carbon source and silicon monoxide as silicon source. Fourier transform infrared (FT-IR) and Raman spectra results confirmed the formation of synthesized SiC particles. X-ray diffraction (XRD) results indicated the major phases of 3C-SiC. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images showed that the SiC particle size is in the range of 40-100 nm and mainly composed of sphere-shaped nanoparticles. The Brunauer-Emmett-Teller (BET) specific surface area of samples is 80.25 m(2)/g. In addition, we proposed the formation mechanism of SiC nanoparticles with high specific surface area by adsorption and vapor-solid mechanism. This facile method for synthesizing SiC nanoparticles provides a new idea for high-value application of corn cobs and new raw material for the preparation of silicon carbide. (C) 2018 The Society of Powder Technology Japan. Published by Elsevier B.V. and The Society of Powder Technology Japan. All rights reserved.
机译:具有低灰和高碳含量的玉米棒是一种普通的废物,占大量农业废物。本文通过使用玉米棒作为碳源将具有高比表面积的碳化硅(SiC)纳米颗粒合成碳化硅(SiC)纳米颗粒的容易方法报告。该方法是通过使用玉米COB作为碳源和硅氧烷作为硅源的玉米COB在1350℃下降低来完成。傅里叶变换红外(FT-IR)和拉曼光谱结果证实了合成的SiC颗粒的形成。 X射线衍射(XRD)结果表明了3C-SiC的主要阶段。扫描电子显微镜(SEM)和透射电子显微镜(TEM)图像显示SiC粒径在40-100nm的范围内,主要由球形纳米粒子组成。样品的Brunauer-Emmett-Teller(Bet)比表面积为80.25米(2)/ g。此外,我们提出了通过吸附和气相机制具有高比表面积的SiC纳米颗粒的形成机制。这种用于合成SiC纳米颗粒的容纳方法为玉米棒和制备碳化硅制备的新原料的高价值应用提供了新的思路。 (c)2018年日本粉末科技学会。由elsevier b.v发表。和日本粉末科技会。版权所有。

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