Concerning the nature of relaxation oscillations in silicon diodesin the cryogenic temperature region

摘要

Time-resolved measurements have been performed of periodic oscillations in the voltage drop across asilicon diode which is fed by stabilized direct current (the situation for temperature measurement) inthe region of instability connected with low-temperature impurity breakdown. Analysis of this effectwas made on the base of simultaneous consideration of current-voltage characteristics of the diodeunder the same conditions. From these characteristics, by means of a new analytical method, the volt-age-dependent series resistance, the breakdown voltage of the diode base, and equivalent diode capacityresponsible for the observed oscillations have been determined. For the first time, practically, linear relation between the feeding current and the oscillations frequency has been explained. This relation followsfrom the fact of approximate constancy of the charge accumulated by the equivalent diode capacitybefore the breakdown (irrespective of the feeding current value).