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首页> 外文期刊>Chinese Journal of Physics >'In-situ' ink-jet printed Fe-doped MgO thin films with tunable ferromagnetism
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'In-situ' ink-jet printed Fe-doped MgO thin films with tunable ferromagnetism

机译:'原位'喷墨印刷的Fe-掺杂的MgO薄膜,可调谐铁磁体

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摘要

Magnetism in wide band gap materials is of great interests for future spintronic device applications. We prepared MgO and Fe-doped MgO films 'in-situ' on substrates by inkjet printing, and investigated the ferromagnetism tuned by the doping of Fe, the annealing temperature and the film thickness. It is found that the Fe-doping improves the crystallinity of the films with lattice structure changed by annealing temperature. The saturation magnetization (M-s) of the films enhanced by similar to 5 times comparing with the pure MgO thin film of similar thickness (similar to 90 nm), because of both the long-range ordering of localized 3d electrons in Fe and the defects induced magnetism. The M-s at 5 K decreases with the film thickness, which is mainly attributed to the interface induced ferromagnetism. The Fe-doped MgO films with ferromagnetism in this work can be used in future spintronic devices.
机译:宽带隙材料中的磁性对于未来的旋转式设备应用具有很大的兴趣。 我们通过喷墨印刷制备MgO和Fe-Doped MgO膜'原位',并研究了Fe,退火温度和膜厚度的掺杂调节的铁环化。 发现Fe-掺杂通过退火温度改变了晶格结构的薄膜的结晶度。 由于与纯MgO薄膜(类似于90nm)的纯MgO薄膜相比,膜的饱和磁化强度(MS)增强了5次,因为局部3D电子和诱导的缺陷的局部3D电子的远程排序 磁性。 M-S处5 k以膜厚度降低,膜厚度主要归因于界面诱导的铁磁性。 该工作中具有铁磁性的Fe掺杂的MgO膜可用于将来的旋转式装置使用。

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  • 来源
    《Chinese Journal of Physics 》 |2020年第1期| 共7页
  • 作者单位

    Cent South Univ Sch Phys &

    Elect Hunan Key Lab Super Microstruct &

    Ultrafast Proc Changsha 410083 Hunan Peoples R China;

    Cent South Univ Sch Phys &

    Elect Hunan Key Lab Super Microstruct &

    Ultrafast Proc Changsha 410083 Hunan Peoples R China;

    Cent South Univ Sch Phys &

    Elect Hunan Key Lab Super Microstruct &

    Ultrafast Proc Changsha 410083 Hunan Peoples R China;

    KTH Royal Inst Technol Dept Mat Sci &

    Engn SE-10044 Stockholm Sweden;

    Lawrence Berkeley Natl Lab Adv Light Source Berkeley CA 94720 USA;

    Lawrence Berkeley Natl Lab Adv Light Source Berkeley CA 94720 USA;

    KTH Royal Inst Technol Dept Mat Sci &

    Engn SE-10044 Stockholm Sweden;

    KTH Royal Inst Technol Dept Mat Sci &

    Engn SE-10044 Stockholm Sweden;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 物理学 ;
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