Bipolar resistive switching behaviour in Mn0.03Zn0.97O/amorphous La0.7Zn0.3MnO3 heterostructure films

摘要

Mn0.03Zn0.97O(MZO)/amorphous La0.7Zn0.3MnO3 (LZMO) heterostructures were deposited on p(+)-Si substrates through sol-gel spin coating. Ag/MZO/LZMO/p(+)-Si and Ag/LZMO/MZO/p(+)-Si devices exhibit a bipolar, reversible and remarkable resistive switching behaviour at room temperature. The ratio of the resistance at high-resistance state (HRS) to that at low-resistance state (LRS) (RHRS/RLRS) in the Ag/LZMO/MZO/p(+)-Si device is approximately five orders of magnitude, and is maintained after over 103 successive switching cycles or over a period of 2x10(6) s, indicating good endurance property and retention characteristics. Conversely, the ratio in the Ag/MZO/LZMO/p(+)-Si device began to decrease after 100 successive switching cycles. The LZMO/MZO interface could play an important role in the resistive switching behaviour of the devices. The dominant conduction mechanism of the two devices is charge-trap emission.