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Visible-light photocatalytic activity of nitrogen-doped NiTiO3 thin films prepared by a co-sputtering process

机译:通过共溅射工艺制备氮掺杂NitiO3薄膜的可见光光催化活性

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Nickel titanate (NiTiO3) thin films were grown by a radio frequency magnetron co-sputtering process using metal (Ni and Ti) targets on fused quartz substrates at a substrate temperature of 400 degrees C. Annealing of asdeposited (amorphous) films was performed at 1100 degrees C for 2 hours to realize a stable crystalline phase. The effect of the Ti target power (200 and 250 W) and nitrogen doping on the structural, morphological and optical properties of post-annealed NiTiO3 thin films were investigated besides photocatalytic activity under visible light irradiation. X-ray diffraction measurement on the films revealed a pure ilmenite phase at 250 W Ti power. Preferential orientation changed from [104] to [110] as Ti power increased from 200 to 250 W. Raman studies on NiTiO3 thin films showed almost all the active modes (5A(g) + 5E(g)) of a crystalline structure. Two different microstructures were observed by scanning electron microscopy, films showed rounded (250 nm) grains at 200 W Ti target power while facet forms (500 nm) develop in the films deposited at 250 W. Chemical bonding and valence states of the involved ions such as Ni 2p, Ti 2p and O 1s were investigated by X-ray photoelectron spectroscopy. Nitrogen doping modifies the rms roughness from 12 nm to 17 nm as demonstrated on 200 W grown films and contributes also to modify the indirect optical band gap from 2.50 to 2.43 eV in films obtained at 250 W Ti target power. As a crucial role of nitrogen doping, photocatalytic activity in a broad visible light range was observed with a good efficiency for the degradation of methylene blue by nitrogen doped NiTiO3 thin films.
机译:镍钛酸镍(NitiO3)薄膜通过在400℃的衬底温度下使用金属(Ni和Ti)靶标在熔融石英底物上的靶向金属(Ni和Ti)靶靶来生长400℃的底物温度。在1100时进行含量的(非晶)膜的退火℃下2小时以实现稳定的结晶相。除了在可见光照射下的光催化活性之外,研究了Ti靶功率(200和250W)和氮掺杂对退火后的NitiO3薄膜的结构,形态学和光学性质的影响。薄膜上的X射线衍射测量显示为250W TI功率的纯Ilmenite相。随着TI功率从200至250W增加到[110]的优先取向从200至250W增加。晶体结构的几乎所有有源模式(5a(g)+ 5e(g))几乎所有的晶体结构的拉曼研究。通过扫描电子显微镜观察两种不同的微观结构,薄膜在200W Ti靶功率下显示圆形(250nm)颗粒,而在沉积在250w的薄膜中,在沉积在250w的薄膜中显影通过X射线光电子能谱研究了Ni 2P,Ti 2P和O 1S。如200W种植膜上所示,氮掺杂将RMS粗糙度改变为12nm至17nm,并且还贡献在250W TI目标功率下获得的薄膜中的2.50至2.43eV的间接光学带隙。作为氮掺杂的关键作用,观察到宽可见光范围中的光催化活性以良好的效率通过氮掺杂的NitiO3薄膜降解亚甲基蓝。

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