High piezoelectric performance of lead-free BiFeO3-BaTiO3 thin films grown by a pulsed laser deposition method

摘要

Lead-free (100 - x) BiFeO3-xBaTiO(3) (BFBTx, x = 0, 30, 33, 40 and 50) piezoelectric thin films were deposited on platinized silicon substrates by using a pulsed laser deposition method. The BFBTx thin films has a single-phase perovskite structure with (111) preferred orientations. Atomic force microscopy images showed the dense morphology, and large piezoresponses were observed in the piezoelectric force microscope measurements. The best local piezoelectric coefficient, d*(33,PFM) value of 259 pm V-1, was observed in the BFBT40 thin film. This result is one of the best d*(33,PFM) values in lead-free piezoelectric thin films with a simple geometry. The BFBT40 piezoelectric thin film can be considered as a strong candidate to replace lead-based piezoelectric thin films for piezoelectric-based microelectromechanical systems.