Enhanced piezoelectric properties of lead-free 0.935(Bi_(0.5)Na_(0.5))TiO_3-0.065BaTiO_3 thin films fabricated by using pulsed laser deposition

摘要

0. 935(Bi_(0. 5)Na_(0. 5))TiO_3-0. 065BaTiO_3 (BNT-BT) thin films have been grown on Pt(111)/Ti/SiO_2/Si substrates by using a pulsed laser deposition method. Deposition conditions of oxygen pressure and deposition temperature were changed. The BNT-BT thin film deposited at 750 °C and 300 mTorr exhibited a slim hysteresis loop with a remnant polarization (2P_r) of 11 μC/cm~2 and a low leakage current density of 7. 3 × 10~(-5) A/cm~2 at 98 kV/cm. The piezoelectric responses of the thin films were investigated using piezoelectric force microscopy with a lock-in amplifier. The thin films exhibited piezoelectric properties with a d_(33,f) value of 168 pm/V.