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Lead-free (K0.5Na0.5)NbO3 thin films by pulsed laser deposition driving MEMS-based piezoelectric cantilevers

机译:脉冲激光沉积驱动基于MEMS的压电悬臂的无铅(K0.5Na0.5)NbO3薄膜

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摘要

Thin film capacitors of the lead-free (K0.5NaO3)NbO3 (KNN) with (100) orientation were grown on Pt/Ti/SiO2/SOI (silicon-on-insulator) substrates by pulsed laser deposition. The films are pure phases and do not show other crystal orientations. The remnant polarization P-r, saturation polarization P-sat, longitudinal d(33,f) and transverse (d(31,f) and e(31,f)) piezoelectric coefficients of the KNN films were determined (P-r= 12.6 mu C/cm(2), P-sat=25.0 mu C/cm(2), d(33,f)=58 pm/V, d(31,f)= -42 pm/V and e(31,f) = -5.6 C/m(2)). These values are well comparable with the highest values reported for lead-free films of different compositions and therefore these KNN films form a potential alternative to PZT films in lead-free MEMS applications. (C) 2015 Elsevier B.V. All rights reserved.
机译:通过脉冲激光沉积在Pt / Ti / SiO2 / SOI(绝缘体上硅)衬底上生长了取向为(100)的无铅(K0.5NaO3)NbO3(KNN)薄膜电容器。膜是纯相,不显示其他晶体取向。确定了KNN膜的残余极化Pr,饱和极化P-sat,纵向d(33,f)和横向(d(31,f)和e(31,f))压电系数(Pr = 12.6μC / cm(2),P-sat = 25.0μC / cm(2),d(33,f)= 58 pm / V,d(31,f)= -42 pm / V和e(31,f)= -5.6 C / m(2))。这些值可以与不同成分的无铅薄膜的最高报告值相比较,因此,这些KNN薄膜在无铅MEMS应用中成为PZT薄膜的潜在替代品。 (C)2015 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Materials Letters》 |2016年第1期|413-416|共4页
  • 作者单位

    Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands|Solmates BV, NL-7522 NB Enschede, Netherlands|Hanoi Univ Sci & Technol, Hanoi, Vietnam;

    Solmates BV, NL-7522 NB Enschede, Netherlands;

    Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands;

    Hanoi Univ Sci & Technol, Hanoi, Vietnam;

    Hanoi Univ Sci & Technol, Hanoi, Vietnam;

    Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Lead-free film; PLD; microcantilever; Piezoelectric properties;

    机译:无铅薄膜;PLD;微悬臂梁;压电性能;

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