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Transport properties of the n-type SrTiO3/LaAlO3 interface

机译:N型SRTIO3 / LAALO3接口的传输属性

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摘要

The thermoelectric properties of the (001) n-type 6.5STO/1.5LAO interface were investigated by means of the all-electron full-potential method based on the semi-classical Boltzmann theory. Calculations show that the n-type 6.5STO/1.5LAO interface exhibits non-zero density of states at the Fermi level (E-F), which leads to unusual transport properties and enhances the electrical conductivity. The influence of the temperature on the carrier mobility and the carrier concentration has been investigated. The calculated carrier concentration as a function of temperature is in concordance with previous experimental and theoretical work. At above the E-F, a significant increase in the electrical conductivity occurs to reach the maximum value 1.98 x 10(20) (Omega m s)(-1) at mu - E-F = 0.05 eV for 300 K, confirming that the 6.5STO/1.5LAO interface is an n-type conduction. The Seebeck coefficient has a negative sign, which confirms that the 6.5STO/1.5LAO interface is an n-type conduction in the vicinity of EF. It has been found that the power factor is zero at low temperature, which rapidly increases to reach its maximum value 8.1 x 10(11) W m(-1) K-2 s(-1) at 900 K. Furthermore, the transport coefficients were investigated as a function of chemical potential at three constant temperatures (300, 600 and 900 K). We would like to highlight that our calculated Seebeck coefficient and carrier concentration are in concordance with previous experimental and theoretical work on 4, 5 and 6 u.c. STO/LAO interfaces. The large Seebeck coefficient is attributed to the non-zero density of states at the E-F. The increase of the Seebeck coefficient also leads to a maximum of the power factor.
机译:通过基于半古典Boltzmann理论的全电子全电位方法研究了(001)N型6.5StO / 1.5LAO界面的热电性能。计算表明,N型6.5STO / 1.5LAO接口在FERMI水平(E-F)处具有非零密度,这导致不寻常的运输性能并增强电导率。研究了温度对载流子迁移率和载体浓度的影响。计算出作为温度函数的载体浓度与先前的实验和理论上的工作相一致。在EF之上,发生电导率的显着增加,以达到MU - EF = 0.05eV的最大值1.98×10(20)( - 1),达到300k,确认6.5STO / 1.5老挝接口是N型传导。 Seebeck系数具有负符号,证实6.5STO / 1.5LAO接口是EF附近的N型传导。已经发现,在低温下功率因数为零,这迅速增加,以在900 k处达到其最大值8.1×10(11)W m(-1)k-2 s(-1)。此外,运输在三个恒定温度(300,600和900K)下,研究了系数作为化学电位的函数。我们希望强调,我们计算的塞贝克系数和载波集中在4,5和6的先前的实验和理论上有助于一致。 STO / LAO接口。大的eDbeck系数归因于E-F处的状态的非零密度。塞贝克系数的增加也导致功率因数的最大值。

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  • 来源
    《RSC Advances》 |2016年第95期|共9页
  • 作者

    Reshak A. H.;

  • 作者单位

    Univ West Bohemia New Technol Res Ctr Univ 8 Plzen 30614 Czech Republic;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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