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Aging- and Variation-Aware Delay Monitoring Using Representative Critical Path Selection

机译:使用代表性关键路径选择进行老化和变化感知的延迟监控

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摘要

Process together with runtime variations in temperature and voltage, as well as transistor aging, degrade path delay and may eventually induce circuit failure due to timing variations. Therefore, in-field tracking of path delays is essential, and to respond to this need, several delay sensor designs have been proposed in the literature. However, due to the significant overhead of these sensors and the large number of critical paths in today's IC, it is infeasible to monitor the delay of every critical path in silicon. We present an aging-and variationaware representative path selection technique based on machine learning that allows to measure the delay of a small set of paths and infer the delay of a larger pool of paths that are likely to fail due to delay variations. Simulation results for benchmark circuits highlight the accuracy of the proposed approach for predicting critical-path delay based on the selected representative paths.
机译:处理过程以及温度和电压的运行时间变化以及晶体管老化会降低路径延迟,并可能最终由于时序变化而导致电路故障。因此,对路径延迟的现场跟踪是必不可少的,并且为了响应这种需求,文献中已经提出了几种延迟传感器设计。但是,由于这些传感器的大量开销以及当今IC中大量的关键路径,因此无法监视硅中每条关键路径的延迟。我们提出了一种基于机器学习的老化和变化感知的代表性路径选择技术,该技术可以测量一小套路径的延迟,并推断可能由于延迟变化而失败的较大路径池的延迟。基准电路的仿真结果突显了所建议方法基于所选代表路径预测关键路径延迟的准确性。

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