Chemical synthesis and surface morphology of amorphous hydrogenated carbon nitride film deposited by N_2/CH_4 dielectric barrier discharge plasma

摘要

A dielectric barrier discharge of N_2:CH_4 mixture was operated at 500 mbar was employed to deposit poly-amide (HCN_x) film, under low input power and atmospheric pressure. The top surface layer of amorphous hydrogenated carbon nitride (a-HCN_x) is analyzed by X-ray photoelectron spectroscopy (XPS). Bulk a-HCN_x is analyzed by means of fourier transform infrared (FTIR) spectroscopy. The deposited polymer having triple bond (–C≡N/–C≡C–) at ~2180 cm~(-1) and carbonyl-amide group –(C=O)NH– at ~1680 cm~(-1), were synthesized by FTIR spectroscopy to elucidate the nature of the products formed from N_2/CH_4 mixture. The nitrile group (–C≡N/–) is decreasing with the elevated annealing temperature is obtained from FTIR spectrum. Shake-up satellite peaks are observed in XPS spectrum at room temperature. The shake-up peaks disappear gradually as the annealing temperature is increased from 50 to 300 °C. Simultaneously, the chemical shift of 1s electron shifted to its own advantageous position. The surface roughness (Root Mean Square, RMS) of the HCN_x film is changing from 5.3 to 28.2 nm as the annealing temperature increases from room temperature to 300 °C.