Deposition of Amorphous ITO Thin Film at Low-Temperature by Inclined Opposite Target Type DC Magnetron Sputtering Method

摘要

The In_2O_3-SnO_2, ITO, thin film is a transparent conductive film. Then, the ITO film is one of the materials for widely practical use. Because the ITO film has high transparency in the area of the visible ray and low resistivity, it should show excellent electromagnetic wave shielding effectiveness. In the present study, the ITO film was produced onto glass substrate at room temperature by the inclined opposite target type DC magnetron sputtering equipment, in which pure In and Sn metal targets were used. The effects of oxygen partial pressure and work voltage on the specific resistivity and transparency of the ITO film were discussed. For low resistivity of the ITO film, the electromagnetic wave shielding effectiveness was studied. The results obtained were summarized as follows (1) The ITO film produced at room temperature had amorphous structure with very smooth surface. (2) The resistivity of ITO film deposited at room temperature showed minimum value at the oxygen partial pressure of 2.73 X 10~(-2)Pa. (3) The resistivity of ITO film deposited at room temperature depended on the work voltage and showed the minimum value in the work voltage of -30V. (4) When the optimum coating conditions were selected, the resistivity of 3.5 X 10~(4) OMEGA.cm was obtained. (5) When the work voltage was -30V, the ITO film deposited at room temperature showed the most effective electromagnetic wave shielding performance. Also, the electromagnetic wave shielding performance was increased by laminating the film.