...
机译:氢化Bismuthene的拓扑相转变和可调谐电子性质:从单层到双层
Yunnan Univ Dept Phys Kunming 650091 Yunnan Peoples R China;
Yunnan Univ Dept Phys Kunming 650091 Yunnan Peoples R China;
Yunnan Univ Dept Phys Kunming 650091 Yunnan Peoples R China;
Yunnan Univ Dept Phys Kunming 650091 Yunnan Peoples R China;
Hangzhou Normal Univ Dept Phys Hangzhou 310036 Peoples R China;
Yunnan Univ Dept Phys Kunming 650091 Yunnan Peoples R China;
hydrogenated bismuthene; topological transition; van der Waals double-layer; interlayer coupling; metal atom intercalation;
机译:氢化Bismuthene的拓扑相转变和可调谐电子性质:从单层到双层
机译:石墨烯的BC6N单层:可调谐电子和磁性通过厚度,门控,拓扑缺陷和Adatom /分子
机译:调整单层三元过渡金属硫族化合物的拓扑阶段和电子性质(ABX_4,A / B = Zr,HF或Ti; x = s,se或te)
机译:氢化P(VDF-co-TrFE)的介电,铁电和压电特性的场致晶体相变依赖性
机译:新型拓扑相和超薄层状材料的电子结构和性质
机译:二维氢化砷的可控能带结构和拓扑相变
机译:谷极化量子异常霍尔相和可调拓扑 半氢化Bi蜂窝单层中的相变