Single-band negative differential resistance in metallic armchair MoS2 nanoribbons

摘要

Semiconductor armchair MoS2 nanoribbons can be converted into conductors by edge functionalization of H atoms or OH groups. Those metallic nanoribbons exhibit I-V characteristics of a single half-filled band with strong negative differential resistance (NDR) under a voltage bias less than 1 V. This originates from the spatial separation between electrons in the conduction and valence bands. The NDR becomes spin dependent if the H atoms or OH groups are not uniformly adsorbed on the edge. Furthermore, the spin polarization can be greatly enhanced in heterojunctions of H- and OH-passivated nanoribbons.