Negative Differential Resistance in Doped Armchair Graphene Nanoribbons

摘要

Using nonequilibrium Green's functions in combination with density-functional theory, we investigate the electronic transport properties of boron doped armchair graphene nanoribbons. The I-V curve of the device shows an interesting negative differential resistance (NDR) phenomenon. We discover that the NDR is caused by armchair graphene nanoribbons electrodes with boron doped and can be tuned by the length of the AGNR in the central scattering region. This physics finding is helpful for us to design graphene-based nanoelectronic devices.