Resistive switching in ferroelectric lead-free 0.5Ba (Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3 thin films

摘要

In this work, resistive switching in pulsed laser deposited ferroelectric lead-free 0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3 (0.5BZT-0.5BCT) thin films was investigated. This study reveals that films grown at 5.5 J cm(-2) have shown optimal ferroelectric and resistive switching response, which are attributed to high tetragonality, large grain size and less defect concentration. Au/0.5BZT-0.5BCT/Pt capacitors show the electroforming free resistive switching that is explained based on the polarization modulation of the Schottky-like barrier at the 0.5BZT-0.5BCT/Au interface. The polarization induced resistive switching is evidenced by its disappearance as the temperature increases to the Curie temperature. The capacitor based on film grown at 5.5 J cm(-2) shows resistive switching characterized by high switching ratio of 10(6) at a low set/reset voltage approximate to 1 V, and by a stable memory window, which are highly required for memory applications.