Predicting voltage induced positive-feedback effect on dynamic reset behavior in resistance switching device

摘要

Investigating dynamic resistance switching behaviors is important for real applications for resistance random access memory (RRAM). In this study, we demonstrate a voltage induced positive-feedback effect which occurs during the reset process under specific conditions, and propose an explanatory mechanism. Since instantaneous change of current always appears with the self-compliance characteristic, research was carried out to clarify the mechanism. We found that the cause is a positive-feedback effect which induces a sudden change in the voltage allocation to the RRAM. A mathematical proof was also carried out to confirm this mechanism, and was used to predict reset behavior when under a specific condition. These experimental and simulation results can help provide a better understanding of the RRAM dynamic reset mechanism.