Crystal micromorphologies and forming voltage effect on resistance switching behaviors in Ti/Pr(Sr0.1Ca0.9)(2)Mn2O7/Pt devices

摘要

Two Pr(Sr0.1Ca0.9)(2)Mn2O7 (PSCMO)-based devices (Ti/PSCMO-1/Pt and Ti/PSCMO-2/Pt) have been prepared by pulsed laser deposition, and the micromorphology of the films can be controlled through the different deposition condition. PSCMO-1 film with a smaller grain size grows with a near-random arrangement, whereas columnar grains with a larger grain size appear in the Ti/PSCMO-2/Pt device. The IeV curves in Ti/PSCMO-2/Pt device show the higher resistance ratio and larger hysteresis than that in the Ti/PSCMO-1/Pt device without forming process. The electron transport property in the PSCMO-2 film shows the higher resistance and metal behavior in room temperature. By fitting the IeV curves, we found that the conduction process in Ti/PSCMO-1/Pt device is dominated by Schottky barrier mechanism, but the conduction behavior in Ti/PSCMO-2/Pt device are dominated by trap-charged space-charge-limited current (SCLC) mechanism. Interesting, after a forming process, the Ti/PSCMO-1/Pt device also displays the higher resistance ratio and larger hysteresis, which can be explained by SCLC mechanism. Our results suggest that the crystal micromorphology and grain size may play a critical role in oxygen vacancy movement, and result in the transformation of resistance switching along with a higher resistance ratio and larger hysteresis in the Ti/PSCMO-2/Pt device. (C) 2015 Elsevier B.V. All rights reserved.