Crystallinity dependence of resistive switching in Ti/Pr(Sr0.1Ca0.9)2Mn2O7/Pt: Filamentary versus interfacial mechanisms

摘要

The resistive switching characteristics of two Pr(Sr0.1Ca0.9)2Mn2O7 (PSCMO)-based devices (Ti/PSCMO-1/Pt and Ti/PSCMO-2/Pt) prepared under different conditions have been investigated. The two devices both showed bipolar switching behaviors. Scanning electron microscope measurements showed different grain boundaries in the two PSCMO films. By fitting the I-V curves and area dependence of the device resistance, we found that the Ti/PSCMO-1/Pt device indicated filamentary conduction, whereas interfacial effects dominated the conductance in Ti/PSCMO-2/Pt device. Our results suggest that the different grain boundaries may play a critical role in oxygen vacancy movement and hence result in the two different resistive switching properties.