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机译:在A-IGZO TFT中的热载波应力下捕获孔引起的异常阈值电压移位
Fudan Univ Dept Mat Sci Natl Engn Lab TFT LCD Mat &
Technol Shanghai 200433 Peoples R China;
Natl Sun Yat Sen Univ Dept Mat &
Optoelect Sci Kaohsiung 80424 Taiwan;
Natl Sun Yat Sen Univ Dept Phys Kaohsiung 80424 Taiwan;
Natl Cheng Kung Univ Dept Photon Tainan 70101 Taiwan;
Natl Sun Yat Sen Univ Dept Phys Kaohsiung 80424 Taiwan;
Natl Sun Yat Sen Univ Dept Photon Kaohsiung 80424 Taiwan;
Natl Tsing Hua Univ Dept Elect Engn Hsinchu 30013 Taiwan;
Natl Sun Yat Sen Univ Dept Phys Kaohsiung 80424 Taiwan;
Natl Sun Yat Sen Univ Dept Mat &
Optoelect Sci Kaohsiung 80424 Taiwan;
Natl Tsing Hua Univ Dept Elect Engn Hsinchu 30013 Taiwan;
Shanghai Normal Univ Dept Phys Shanghai 200234 Peoples R China;
Fudan Univ Dept Mat Sci Natl Engn Lab TFT LCD Mat &
Technol Shanghai 200433 Peoples R China;
hole injection; a-IGZO; hot-carrier stress; passivation layer;
机译:在A-IGZO TFT中的热载波应力下捕获孔引起的异常阈值电压移位
机译:带有铜栅的a-IGZO TFT的栅极偏置应力引起的阈值电压漂移效应
机译:交流偏压下电荷俘获/去俘获对IGZO TFT阈值电压偏移的影响
机译:利用改进的拉伸指数方程估算a-IGZO TFT在不同偏置温度应力下的阈值电压漂移
机译:电荷陷阱对高k栅极堆叠中的迁移率和阈值电压不稳定性产生影响。
机译:空穴变化对基于气泡的双孔光子晶体表面发射激光器的阈值特性的影响
机译:在正偏置照明应力下,传导带偏离依赖性阈值电压移位在A-Ingazno TFT中