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首页> 外文期刊>Journal of Materials Chemistry, A. Materials for energy and sustainability >Highly-efficient heterojunction solar cells based on two-dimensional tellurene and transition metal dichalcogenides
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Highly-efficient heterojunction solar cells based on two-dimensional tellurene and transition metal dichalcogenides

机译:基于二维碲和过渡金属二均甲基化物的高效异质结太阳能电池

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摘要

Two-dimensional (2D) semiconductors, such as graphitic carbon nitride (g-C3N4), molybdenum disulfide (MoS2) and phosphorene, with desirable optoelectronic properties and large photoreactive contact area for light absorption, have been widely used as donors and acceptors in high-quality heterojunction solar cells. In this work, by using first-principles density functional theory calculations, we demonstrate that tellurene is a promising candidate 2D semiconductor for designing highly-efficient solar cells due to its desirable optoelectronic properties (an ideal band gap of 1.47eV, a high carrier mobility up to 2.87 x 10(3) cm(2) V-1 s(-1), strong visible light absorption up to 5.0 x 10(5) cm(-1) and high stability in ambient conditions) superior to existing 2D semiconductors used in solar cells. Furthermore, we find that tellurene and TMDs show desirable type II band alignment for constructing highly-efficient heterojunction solar cells with strong charge separation and enhanced sunlight absorption. In particular, the calculated maximum power conversion efficiency (PCE) of our designed Te/WTe2 and Te/MoTe2 heterojunction solar cells can reach as high as 22.5% and 20.1%, respectively.
机译:二维(2D)半导体,例如石墨碳氮化物(G-C3N4),二硫化钼(MOS2)和磷烯,具有所需的光电性和用于光吸收的大型光敏接触面积,已被广泛用作高的供体和受体 - 质量异质结太阳能电池。在这项工作中,通过使用第一原理的密度函数理论计算,我们证明了碲是一种有希望的候选2D半导体,用于设计高效的太阳能电池,由于其理想的光电性质(理想的带隙1.47EV,高载流动差距高达2.87 x 10(3)厘米(2)V-1 S(-1),可见光吸收强度高达5.0×10(5)厘米(-1),环境条件的高稳定性)优于现有的2D半导体用于太阳能电池。此外,我们发现碲和TMDS显示所需的II型带对准,用于构建具有强电荷分离和增强的阳光吸收的高效异质结太阳能电池。特别地,我们所设计的TE / WTE2和TE / MOTE2异质结太阳能电池的计算最大功率转换效率(PCE)分别高达22.5%和20.1%。

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    Univ Sci &

    Technol China Hefei Natl Lab Phys Sci Microscale Dept Chem Phys Synerget Innovat Ctr Quantum Informat &

    Quantum P Hefei 230026 Anhui Peoples R China;

    Univ Sci &

    Technol China Hefei Natl Lab Phys Sci Microscale Dept Chem Phys Synerget Innovat Ctr Quantum Informat &

    Quantum P Hefei 230026 Anhui Peoples R China;

    Univ Sci &

    Technol China Hefei Natl Lab Phys Sci Microscale Dept Chem Phys Synerget Innovat Ctr Quantum Informat &

    Quantum P Hefei 230026 Anhui Peoples R China;

    Univ Sci &

    Technol China Hefei Natl Lab Phys Sci Microscale Dept Chem Phys Synerget Innovat Ctr Quantum Informat &

    Quantum P Hefei 230026 Anhui Peoples R China;

    Univ Sci &

    Technol China Hefei Natl Lab Phys Sci Microscale Dept Chem Phys Synerget Innovat Ctr Quantum Informat &

    Quantum P Hefei 230026 Anhui Peoples R China;

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  • 正文语种 eng
  • 中图分类 工程材料学 ;
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