首页> 外文期刊>Journal of Materials Chemistry, A. Materials for energy and sustainability >Aluminum-incorporated p-CuO/n-ZnO photocathode coated with nanocrystal-engineered TiO2 protective layer for photoelectrochemical water splitting and hydrogen generation
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Aluminum-incorporated p-CuO/n-ZnO photocathode coated with nanocrystal-engineered TiO2 protective layer for photoelectrochemical water splitting and hydrogen generation

机译:铝掺入的P-CUO / N-ZnO光电阴极涂覆有用于光电化学水分裂和氢气的纳米晶体工程TiO2保护层

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摘要

The poor photocorrosion stability and low photovoltage of cupric oxide (CuO) are the main limiting factors of CuO-based photocathodes for solar-driven photoelectrochemical (PEC) water splitting and hydrogen evolution. In this paper, we demonstrate a highly efficient CuO-based photocathode fabricated on a glass substrate coated with fluorine-doped tin oxide (FTO). Incorporating aluminum (Al) into the thin CuO film (CuO:Al) and inserting a thin CuO interfacial layer between the CuO:Al film and the FTO-coated glass substrate is shown to improve the photocorrosion stability of the CuO and increase the photocurrent without increasing the dark current. We also demonstrate that depositing a layer of ZnO to form a buried p-(CuO/CuO:Al)/n-ZnO:Al heterojunction and controlling the carrier concentration and conductivity of the ZnO through the incorporation of Al can significantly improve the photovoltage and PEC activity of the photocathode, leading to a record-high photovoltage of approximate to 0.53 V-RHE. By capping the photocathode with a crystal-engineered TiO2 protective layer, we are able to significantly stabilize the photocathode against photocorrosion and further improve the PEC activity of the final p-(CuO/CuO:Al)/n-ZnO:Al/TiO2/Au-Pd photocathode, resulting in record-high photocurrent density of approximate to 5.4 mA cm(-2) and photocorrosion stability of approximate to 87% after 5 hours.
机译:铜氧化铜(CUO)的光电腐蚀稳定性和低光电电压是太阳能驱动光电子化学(PEC)水分裂和氢气进化的CuO基光电阴影的主要限制因素。在本文中,我们证明了在涂有氟掺杂氧化锡(FTO)的玻璃基板上制造的高效基于CuO的光电阴极。将铝(Al)掺入薄CuO膜(CuO:Al)并在CuO:Al膜和FTO涂覆的玻璃基板之间插入薄CuO界面层,示出了提高CUO的光电腐蚀稳定性并增加了光电流增加暗电流。我们还证明沉积一层ZnO以形成掩埋的P-(CuO / CuO:Al)/ N-ZnO:Al异质结,通过掺入Al的载体浓度和控制ZnO的载流子浓度和导电性可以显着改善光电电压和光电阴极的PEC活性,导致近似为0.53V-rh的记录高光电电压。通过用晶体化工程的TiO 2保护层覆盖光电阴极,我们能够显着稳定光电阴极反对光腐蚀,并进一步改善最终P-(CuO / CuO:Al)/ N-ZnO:Al / TiO2 /的PEC活性Au-Pd光电阴极,导致近似至5.4 mA cm(-2)的记录高光电流密度,并且在5小时后近似的光电腐蚀稳定性达到87%。

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