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Manufacturing method of photocathode for producing hydrogen using photoelectrochemical water splitting

机译:利用光电化学水分解制氢的光阴极的制造方法

摘要

The present invention is a method of manufacturing a material used as a photoelectrode for hydrogen production using photoelectrochemical water decomposition, preparing a Si wafer, coating a spherical polymer bead on top of the Si wafer, and plasma treatment Reducing the size of the polymer beads coated on the Si wafer; depositing a precious metal on the Si wafer coated with the reduced size polymer beads; and removing the polymer beads to form a precious metal pattern made of the precious metal. A step of forming, etching the Si wafer using the noble metal pattern as an etching catalyst to form Si nanowires on the Si wafer, removing the noble metal pattern, and Si formed on the Si wafer The nano-wire is used as a sacrificial material to perform a galvanic substitution reaction, so the Si nano-wire has branches Is a step of changing to a chalcogen nanowire, and a step of chemically reacting the result of the galvanic substitution reaction to cause the chalcogen constituting the chalcogen nanowire to be converted into a chalcogen compound and cation exchange of the reaction result of the topochemical reaction. It relates to a method of manufacturing a photocathode for hydrogen production comprising the step of causing the chalcogenide compound to be converted to chalcogenide by reacting. According to the present invention, since it is made of a nanostructure in the form of a nanowire having branches and made of a chalcogenide material having a band gap suitable for a visible light absorption rate, it has a high specific surface area, thereby improving the efficiency of hydrogen production by sunlight.
机译:本发明是一种使用光电化学水分解法制造用作氢生产用光电极的材料的方法,制备硅晶片,在硅晶片的顶部上涂覆球形聚合物珠,并进行等离子体处理,以减小所涂覆的聚合物珠的尺寸。在硅晶片上;在涂覆有减小尺寸的聚合物珠的Si晶片上沉积贵金属;除去聚合物珠以形成由贵金属制成的贵金属图案。使用贵金属图案作为蚀刻催化剂来形成,蚀刻Si晶片的步骤,以在Si晶片上形成Si纳米线,去除贵金属图案,并在Si晶片上形成Si。该纳米线用作牺牲材料。为了进行电取代反应,Si纳米线具有分支是变为硫属元素纳米线的步骤,并且是通过化学反应将电化取代反应的结果引起构成硫族元素纳米线的硫属元素转化为硅的步骤。硫属化合物和阳离子交换是拓扑化学反应的反应结果。本发明涉及一种制造用于氢生产的光电阴极的方法,该方法包括通过反应使硫族化物化合物转化为硫族化物的步骤。根据本发明,由于其由具有分支的纳米线形式的纳米结构制成,并且由具有适合于可见光吸收率的带隙的硫族化物材料制成,因此具有高的比表面积,从而改善了阳光产生氢气的效率。

著录项

  • 公开/公告号KR1020200046263A

    专利类型

  • 公开/公告日2020-05-07

    原文格式PDF

  • 申请/专利权人 한국세라믹기술원;

    申请/专利号KR1020180127150

  • 发明设计人 정현성;김동현;

    申请日2018-10-24

  • 分类号

  • 国家 KR

  • 入库时间 2022-08-21 10:54:36

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