首页> 外文期刊>Journal of nanoscience and nanotechnology >Influence of an Annealing Temperature in a Vacuum Atmosphere on the Physical Properties of Indium Tin Oxide Nanorod Films
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Influence of an Annealing Temperature in a Vacuum Atmosphere on the Physical Properties of Indium Tin Oxide Nanorod Films

机译:退火温度在真空气氛中的影响对氧化铟锡纳米杆膜的物理性质

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In the present study, indium tin oxide (ITO) nanorod films were produced by usage of ion-assisted electron-beam evaporation with a glancing angle deposition technique. The as-produced ITO nanorod films were annealed in the temperature range of 100-500 degrees C for two hours in a vacuum atmosphere. The as-produced ITO nanorod films exhibited (222) and (611) preferred orientations from the X-ray diffraction pattern. After vacuum annealing at 500 degrees C, the ITO nanorod films demonstrated many preferred orientations and the improvement of film crystallinity. The sheet resistance of the as-produced ITO nanorod films was 11.92 Omega/square and was found to be 13.63 Omega/square by annealing at 500 degrees C. The as-produced and annealed ITO nanorod films had a rod diameter of around 80 nm and transmittance in a visible zone of around 90%. The root mean square roughness of the as-produced ITO nanorod film's surface was 5.49 nm, which increased to 13.77 nm at an annealing temperature of 500 degrees C. The contact angle of the as-produced ITO nanorod films was 110.9 degrees and increased to 116.5 degrees after annealing at 500 degrees C.
机译:在本研究中,通过使用具有透明角沉积技术的离子辅助电子束蒸发来生产氧化铟锡(ITO)纳米棒膜。在真空气氛中,在100-500℃的温度范围内退火,在100-500℃的温度范围内退火。从X射线衍射图案表现出(222)和(611)优选取向的制备的ITO纳米孔膜。在500摄氏度下真空退火后,ITO纳米棒膜展示了许多优选的取向和膜结晶度的改善。制造的ITO纳米棒薄膜的薄层电阻是11.92ω/平方,并通过在500℃下退火发现13.63Ω/平方。制造和退火的ITO纳米棒膜的棒直径约为80nm可见区内的透射率约为90%。制备的ITO纳米芯片表面的均方平均方形粗糙度为5.49nm,在500℃的退火温度下增加到13.77nm。“制造的ITO纳米孔薄膜的接触角为110.9度,增加到116.5在500摄氏度下退火后的程度。

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