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Large enhanced conversion efficiency of perovskite solar cells by CsBr doping

机译:CSBR掺杂的Perovskite太阳能电池的大增强了转换效率

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摘要

Perovskite solar cells single-doped with Br- or Cs+ ions have been proved to be an effective approach to improve their efficiency and stability. In our work, we took advantage of co-doping with Br- and Cs+. At our studied doping levels from CH3NH3I:PbI2:CsBr = 1:1:0 (x = 0) to 0.85:1:0.15 (x = 0.15), CsBr doping does not introduce any detectable impurity, and the crystal grains grow larger with increasing CsBr doping level. Furthermore, when the CsBr doping level is less than x = 0.1, it can progressively enhance the optical absorption of the perovskite film, although the absorption begins to decrease when the doping level rises above x = 0.1. X-ray photoelectron spectroscopy measurements show that Br- has successfully replaced I- and bonds with Pb2+ after CsBr doping. At the optimized doping level of x = 0.1, the incorporation of CsBr in the reaction system can improve the morphology of perovskite films and greatly enhance the efficiency from 9.8% for undoped sample to 13.6%, better than single Br- or Cs+ doping. Our result shows that CsBr doping is an effective method to enhance the efficiency of perovskite solar cells.
机译:钙钛矿太阳能电池单掺杂有BR-或Cs +离子已被证明是改善其效率和稳定性的有效方法。在我们的工作中,我们采取了共掺杂BR-和Cs +的优势。在我们的从CH3NH3I研究的掺杂水平:碘化铅:溴化铯= 1:1:0(X = 0)到0.85:1:0.15(X = 0.15),溴化铯掺杂不引入任何可检测的杂质,和该晶粒生长得更大以增加溴化铯掺杂水平。此外,当溴化铯掺杂水平小于x = 0.1,它可以逐渐地提高钙钛矿薄膜的光吸收,虽然吸收开始时,掺杂水平以上X = 0.1上升到下降。 X射线光电子能谱法测量结果表明,BR-已成功替代I-和债券Pb2 +的溴化铯掺杂之后。在x = 0.1的优化掺杂水平,溴化铯在反应体系中的掺入可提高钙钛矿薄膜的形态和从9.8%大大提高效率为未掺杂的样品以13.6%,好于单BR-或Cs +掺杂。我们的结果表明,溴化铯掺杂是为了提高钙钛矿太阳能电池的效率的有效方法。

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  • 来源
    《Journal of Materials Science》 |2017年第22期|共9页
  • 作者单位

    Henan Univ Sch Phys &

    Elect Inst Computat Mat Sci Kaifeng 475004 Peoples R China;

    Henan Univ Sch Phys &

    Elect Inst Computat Mat Sci Kaifeng 475004 Peoples R China;

    Henan Univ Sch Phys &

    Elect Inst Computat Mat Sci Kaifeng 475004 Peoples R China;

    Henan Univ Sch Phys &

    Elect Inst Computat Mat Sci Kaifeng 475004 Peoples R China;

    Henan Univ Sch Phys &

    Elect Inst Computat Mat Sci Kaifeng 475004 Peoples R China;

    Henan Univ Sch Phys &

    Elect Inst Computat Mat Sci Kaifeng 475004 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
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