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Defect step controlled growth of perovskite MAPbBr(3) single crystal

机译:缺陷步骤控制的Perovskite Mapbbr(3)单晶

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摘要

Perovskite MAPbBr(3) (MA=CH3NH3+) single crystals were grown via the anti-solvent vapor-assisted crystallization method. The crystal growth process was optimized by adjusting the solution concentration and diluting the anti-solvent. The maximum size of the obtained crystal was 9x9x3mm(3). It shows that the MAPbBr(3) single crystal is a cubic structure, the space group is Pm3m, and the lattice constant is 0.59062nm. Furthermore, its energy band gap is approximately 2.23eV. The atomic force microscopy results demonstrated that the growth process of MAPbBr(3) single crystal followed the defect step growth mechanism, which was controlled by the screw dislocations within the crystal. Based on the curling growth of a screw dislocation on the crystal surface, a spiral step was formed. After the step was rotated around the entire mesa, a higher step was generated. Repeatedly, the step growth of screw dislocation within the crystal came into being. Besides, some small pits were also observed on (100) plane of the MAPbBr(3) crystal. These pits hindered the movement of steps and affected the lattice arrangement around them, causing the structural mismatch and more defects within the crystals.
机译:通过抗溶剂气相辅助结晶方法生长钙钛矿Mapbbr(3)(MA = CH 3 NH 3 +)单晶。通过调节溶液浓度并稀释抗溶剂来优化晶体生长过程。所得晶体的最大尺寸为9x9x3mm(3)。它表明,MAPBBR(3)单晶是立方结构,空间组是PM3 M,晶格常数为0.59062nm。此外,其能带隙约为2.23EV。原子力显微镜表明结果表明,MAPBBR(3)单晶的生长过程沿着晶体内的螺杆脱位控制的缺陷步骤生长机制。基于晶体表面上的螺杆位错的卷曲生长,形成螺旋步骤。在围绕整个台面旋转步骤之后,产生更高的步骤。反复地,晶体内螺杆位错的阶梯生长为存在。此外,在MAPBBR(3)晶体的(100)平面上也观察到一些小凹坑。这些坑阻碍了步骤的运动并影响它们周围的晶格排列,从而导致晶体内的结构失配和更多缺陷。

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  • 来源
    《Journal of Materials Science》 |2019年第17期|共8页
  • 作者单位

    Xian Technol Univ Shaanxi Key Lab Optoelect Funct Mat &

    Devices Sch Mat &

    Chem Engn Xian 710021 Shaanxi Peoples R China;

    Xian Technol Univ Shaanxi Key Lab Optoelect Funct Mat &

    Devices Sch Mat &

    Chem Engn Xian 710021 Shaanxi Peoples R China;

    Xian Technol Univ Shaanxi Key Lab Optoelect Funct Mat &

    Devices Sch Mat &

    Chem Engn Xian 710021 Shaanxi Peoples R China;

    Xian Technol Univ Shaanxi Key Lab Optoelect Funct Mat &

    Devices Sch Mat &

    Chem Engn Xian 710021 Shaanxi Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
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