首页>
外国专利>
SINGLE-CRYSTAL PEROVSKITE SOLID SOLUTIONS WITH INDIFFERENT POINTS FOR EPITAXIAL GROWTH OF SINGLE CRYSTALS
SINGLE-CRYSTAL PEROVSKITE SOLID SOLUTIONS WITH INDIFFERENT POINTS FOR EPITAXIAL GROWTH OF SINGLE CRYSTALS
展开▼
机译:单点晶体生长具有不同点的单晶钙钛矿固溶体
展开▼
页面导航
摘要
著录项
相似文献
摘要
Growth of single crystal epitaxial films of the perovskite crystal structure by liquid- or vapor-phase means can be accomplished by providing single-crystal perovskite substrate materials of improved lattice parameter match in the lattice parameter range of interest. Current substrates do not provide as good a lattice match, have inferior properties, or are of limited size and availability because cost of materials and difficulty of growth. This problem is solved by the single-crystal perovskite solid solutions described herein grown from mixtures with an indifferent melting point that occurs at a congruently melting composition at a temperature minimum in the melting curve in the pseudo-binary molar phase diagram. Accordingly, single-crystal perovskite solid solutions, structures, and devices including single-crystal perovskite solid solutions, and methods of making single-crystal perovskite solid solutions are described herein.
展开▼