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Single-crystal perovskite solid solutions with indifferent points for epitaxial growth of single crystals

机译:具有无关紧要点的单晶钙钛矿固溶体用于单晶的外延生长

摘要

Growth of single crystal epitaxial films of the perovskite crystal structure by liquid- or vapor-phase means can be accomplished by providing single-crystal perovskite substrate materials of improved lattice parameter match in the lattice parameter range of interest. Current substrates do not provide as good a lattice match, have inferior properties, or are of limited size and availability because cost of materials and difficulty of growth. This problem is solved by the single-crystal perovskite solid solutions described herein grown from mixtures with an indifferent melting point that occurs at a congruently melting composition at a temperature minimum in the melting curve in the pseudo-binary molar phase diagram. Accordingly, single-crystal perovskite solid solutions, structures, and devices including single-crystal perovskite solid solutions, and methods of making single-crystal perovskite solid solutions are described herein.
机译:钙钛矿晶体结构的单晶外延膜通过液相或气相方法的生长可以通过提供在所关注的晶格参数范围内具有改善的晶格参数匹配的单晶钙钛矿衬底材料来实现。由于材料成本和生长困难,目前的基板不能提供良好的晶格匹配,性能较差或尺寸和可用性有限。该问题通过本文所述的单晶钙钛矿固溶体解决,该固溶体由在准二元摩尔相图的熔融曲线中的最低温度下在完全熔融的组合物中出现的熔点无关的熔点生长。因此,本文描述了单晶钙钛矿固溶体,包括单晶钙钛矿固溶体的结构和装置,以及制备单晶钙钛矿固溶体的方法。

著录项

  • 公开/公告号US10378123B2

    专利类型

  • 公开/公告日2019-08-13

    原文格式PDF

  • 申请/专利权人 QUEST INTEGRATED LLC;

    申请/专利号US201716065688

  • 发明设计人 VINCENT FRATELLO;

    申请日2017-10-31

  • 分类号C30B11;C30B29/32;C30B15;C30B19;C30B23;C30B25;C30B29/22;C30B29/30;C30B11/14;C30B15/36;C30B19/12;C30B25/06;

  • 国家 US

  • 入库时间 2022-08-21 12:16:39

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