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首页> 外文期刊>Journal of Materials Science >Strain engineering the behaviors of small molecules over defective MoS2 monolayers in the 2H and 1T ' phases
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Strain engineering the behaviors of small molecules over defective MoS2 monolayers in the 2H and 1T ' phases

机译:应变工程在2H和1T阶段中缺陷MOS2单层的小分子的行为

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摘要

The influence of strain on the behaviors of gas molecules over surface is always limited by the relative weak gas adsorption, the small range of elastic strain of adsorbents and the uniform response of surface sites. However, the latter two factors may be overcome in two-dimensional (2D) materials with defects. In this work, we employ first-principles calculations to investigate the behavior of a series of common gas molecules (CO, CO2, NH3, SO2, NO, NO2 and O-2) on defective (S vacancies and non-metal C/N/O doped) MoS2 monolayers in both the 2H and 1T ' phases under biaxial strain (+/- 5%). When defects are introduced, strain can cause the gas molecules around the defects to physically/chemically adsorb, desorb, dissociate or even react with dopant. Meanwhile, the mechanical energy consumed to generate strain can be effectively transferred to change the energy of adsorption/desorption/reaction of adsorbates with an efficiency of at least 15% (if only adsorption strength is altered) up to 200% (if reaction is triggered). Subsequently, a number of interesting phenomena can be observed. For example, the doping-and-undoping cycle (e.g., the C doping of 2H-MoS2 and N doping of 1T '-MoS2 monolayers) can be dynamically controlled by pumping relevant gases and applying proper strain. Reversible adsorption and desorption of NH3 on defective MoS2 monolayers in both phases can be achieved within +/- 3% strain. NO or NO2 and CO can be converted into non-toxic N2O and CO2 over the N-doped (3% strain) and O-doped (- 3% strain) 1T '-MoS2 monolayers. In essence, defective 2D materials can serve as ideal multi-purpose platforms for strain engineering the behaviors of adsorbates.
机译:应变的超过表面气体分子的行为的影响总是由相对较弱的气体吸附,小范围的吸附剂弹性应变和表面位点的均匀的响应的限制。然而,后两个因素可以与缺陷的二维(2D)的材料来克服。在这项工作中,我们采用第一原理计算来调查一系列共同的气体分子(CO,CO 2,NH 3,SO 2,NO,NO 2和O-2)上有缺陷的(S空位和非金属C / N的行为/ O掺杂的)的MoS 2的单层在2H和双轴应变(+/- 5%)下1T'相两者。当引入的缺陷,应变可引起周围的缺陷的气体分子物理/化学吸附,解吸,解离或甚至与掺杂剂反应。同时,机械能消耗以产生菌株可有效地传递到了改变的吸附/解吸/吸附物具有至少15%的效率反应的能量(如果只吸附强度改变的)到200%(如果反应被触发)。随后,可以观察到一些有趣的现象。例如,掺杂和 - 去杂周期(例如,2H-的MoS 2的C掺杂和1T的“-MoS2单层n型掺杂)可以动态地通过泵送相关气体和施加适当的应变的控制。可逆吸附和NH 3的脱附上在两相中缺陷的MoS 2的单层可+/- 3%的应变范围内实现。 NO或NO 2和CO可被转化成无毒的N2O和CO2在n型掺杂的(3%的应变)和O-掺杂( - 3%的应变)1T“-MoS2单层。从本质上说,有缺陷的材料2D可以作为应变工程吸附物的行为理想的多功能平台。

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