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首页> 外文期刊>Journal of Electronic Materials >Sintering Behavior and Microwave Dielectric Properties of Low-Permittivity SrMgSi(2)O(6)Ceramic
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Sintering Behavior and Microwave Dielectric Properties of Low-Permittivity SrMgSi(2)O(6)Ceramic

机译:低渗透度SRMGSI(2)O(6)陶瓷的烧结行为和微波介电性能

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摘要

Low-permittivity SrMgSi(2)O(6)microwave dielectric ceramics were synthesized via a conventional solid-state reaction method. Further, their sintering behavior as well as structural and microwave dielectric properties were studied. The x-ray diffraction patterns of the SrMgSi(2)O(6)and Sr(2)MgSi(2)O(7)ceramics were compared; both the samples were confirmed to be tetragonal. Meanwhile, the microwave dielectric properties of the samples were related to their microscopic morphology. In addition, the SrMgSi(2)O(6)ceramics had a low sintering temperature of 1125 degrees C; they exhibited good microwave dielectric performances with a relative permittivity of epsilon(r) = 6.7, a quality factorQ x f = 25,800 GHz, and temperature coefficient of the resonator frequency tau(f) = -46 ppm/degrees C. Therefore, the ceramics exhibit potential for application in microwave devices.
机译:低介电常数SRMGSI(2)O(6)微波介电陶瓷通过常规的固态反应方法合成。 此外,研究了它们的烧结行为以及结构和微波介电性能。 比较SRMGSI(2)O(6)和Sr(2)MgSI(2)o(2)o(7)陶瓷的X射线衍射图谱; 确认样品都是四边形的。 同时,样品的微波介电性质与它们的微观形态有关。 此外,SRMGSI(2)O(6)陶瓷的烧结温度为1125摄氏度; 它们具有良好的微波介电性能,具有ε(R)= 6.7的相对介电常数,质量因子XF = 25,800GHz,以及谐振器频率Tau(F)= -46ppm /℃的温度系数。因此,陶瓷表现出 微波设备中应用的潜力。

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  • 来源
    《Journal of Electronic Materials》 |2020年第10期|共5页
  • 作者单位

    Guilin Univ Technol Guangxi Key Lab Collaborat Innovat Ctr Explorat H Sch Mat Sci &

    Engn Guangxi Minist Prov Jointly Constructed Cultivat Guilin 541004 Peoples R China;

    Guilin Univ Technol Guangxi Key Lab Collaborat Innovat Ctr Explorat H Sch Mat Sci &

    Engn Guangxi Minist Prov Jointly Constructed Cultivat Guilin 541004 Peoples R China;

    Guilin Univ Technol Guangxi Key Lab Collaborat Innovat Ctr Explorat H Sch Mat Sci &

    Engn Guangxi Minist Prov Jointly Constructed Cultivat Guilin 541004 Peoples R China;

    Guilin Univ Technol Guangxi Key Lab Collaborat Innovat Ctr Explorat H Sch Mat Sci &

    Engn Guangxi Minist Prov Jointly Constructed Cultivat Guilin 541004 Peoples R China;

    Guilin Univ Technol Guangxi Key Lab Collaborat Innovat Ctr Explorat H Sch Mat Sci &

    Engn Guangxi Minist Prov Jointly Constructed Cultivat Guilin 541004 Peoples R China;

    Guilin Univ Technol Guangxi Key Lab Collaborat Innovat Ctr Explorat H Sch Mat Sci &

    Engn Guangxi Minist Prov Jointly Constructed Cultivat Guilin 541004 Peoples R China;

    Guilin Univ Technol Guangxi Key Lab Collaborat Innovat Ctr Explorat H Sch Mat Sci &

    Engn Guangxi Minist Prov Jointly Constructed Cultivat Guilin 541004 Peoples R China;

    Guilin Univ Technol Guangxi Key Lab Collaborat Innovat Ctr Explorat H Sch Mat Sci &

    Engn Guangxi Minist Prov Jointly Constructed Cultivat Guilin 541004 Peoples R China;

    Guilin Univ Technol Guangxi Key Lab Collaborat Innovat Ctr Explorat H Sch Mat Sci &

    Engn Guangxi Minist Prov Jointly Constructed Cultivat Guilin 541004 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 计量学;材料;
  • 关键词

    Low permittivity; SrMgSi2O6; microwave dielectric properties;

    机译:低介电常数;SRMGSI2O6;微波介电性能;

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